基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9∶1。运用分光光度计、四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析。计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质。实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值。薄膜的结晶度随着基底温度的提高而提高。

Tin-doped indium oxide (ITO) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering, using an ITO target with a combination of 90% In<inf>2</inf>O<inf>3</inf> and 10% SnO<inf>2</inf> in mass fraction. The effects of substrate temperature on the thin film's transparency and resistivity were studied by spectrophotometer and four-point probe meter. The structural was analyzed by X-ray diffraction (XRD) diffractometer. The interplanar spacing and crystal grain size were calculated, the mechenical properties of films were studied. The results showed that the lowest resistivity could be got while the transparency maintained above 85% with the proper substrate temperature of 200°C, that is to say there is an optimal substrate temperature to prepare the best performance thin film. It showed that the higher the substrate temperature became the better the crystallization was.