InGaAs/InAlAs/InP 量子级联激光器材料生长与器件研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP 基雪崩光电二极管的单光子探测器的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP 基光子晶体微加工与发光特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InGaAs/InAlAs/InP 量子级联激光器材料生长与器件研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

用于红外单光子探测的InP基盖革雪崩光电二极管的设计与工艺研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

基于Y 波导的InP 基光子集成器件的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP/InGaAsP光晶体管探测器和双模激光器的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

InP基1.55μm波长高性能波导探测器研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaAs/InP 键合技术研究及其太阳电池应用

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T01:06:41Z No. of bitstreams: 1 晏磊--GaAs-InP键合技术研究及其太阳电池应用.pdf: 1948545 bytes, checksum: f2c55a092591dfa48fe9063fb432559f (MD5)

Output Characteristics of an InP/InGaAsP Triangle Microcavity Laser

Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.

Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Two-port InGaAsP/InP square resonator microlasers

Two-port InGaAsP/InP square resonator microlasers with a side length of 20 mm have been fabricated by the planar technology process, which have two 1 mu m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 x 10(4) at the threshold current.

InP单晶锭退火处理方法

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InP基平面型背入射雪崩光电二极管及其制造方法

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InP衬底上集成增强型和耗尽型HEMT的制作方法

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