Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T13:35:57Z No. of bitstreams: 1 Long rectangle resonator 1550 nm AlGaInAsInP lasers.pdf: 629550 bytes, checksum: ffe6824b8a68dddf3992d32d8afbe98a (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28T13:50:05Z (GMT) No. of bitstreams: 1 Long rectangle resonator 1550 nm AlGaInAsInP lasers.pdf: 629550 bytes, checksum: ffe6824b8a68dddf3992d32d8afbe98a (MD5)

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National Nature Science Foundation of China (NNSFC) 60777028 60723002 60838003; Major State Basic Research Program 2006CB302804 ; Project of National Lab for Tsinghua Information Technologies

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National Nature Science Foundation of China (NNSFC) 60777028 60723002 60838003; Major State Basic Research Program 2006CB302804 ; Project of National Lab for Tsinghua Information Technologies