Two-port InGaAsP/InP square resonator microlasers


Autoria(s): Che KJ (Che K. -J.); Lin JD (Lin J. -D.); Huang YZ (Huang Y. -Z.); Yang YD (Yang Y. -D.); Du Y (Du Y.)
Data(s)

2010

Resumo

Two-port InGaAsP/InP square resonator microlasers with a side length of 20 mm have been fabricated by the planar technology process, which have two 1 mu m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 x 10(4) at the threshold current.

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This work was supported by the National Nature Science Foundation of China under Grants 60777028, 60723002 and 60838003, and the Major State Basic Research Program under Grant 2006CB302804.

其它

This work was supported by the National Nature Science Foundation of China under Grants 60777028, 60723002 and 60838003, and the Major State Basic Research Program under Grant 2006CB302804.

Identificador

http://ir.semi.ac.cn/handle/172111/11364

http://www.irgrid.ac.cn/handle/1471x/60825

Idioma(s)

英语

Fonte

Che KJ (Che K. -J.), Lin JD (Lin J. -D.), Huang YZ (Huang Y. -Z.), Yang YD (Yang Y. -D.), Du Y (Du Y.).Two-port InGaAsP/InP square resonator microlasers.ELECTRONICS LETTERS,2010,46(8):585-U62

Palavras-Chave #光电子学 #MODES
Tipo

期刊论文