Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-mu m surface emitting second-order distributed feedback quantum cascade laser (DFB QCL) structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm(-1). Using a pi phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors

Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.

High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

A high-efficiency high-power evanescently coupled UTC-photodiode

The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported. Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized: one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD; and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together. The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method, and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.

High electrical-to-green efficiency high stability intracavity-frequency-doubled Nd:YAG-LBO QCW 532 nm laser with a straight cavity

An electrical-to-green efficiency of more than 10% was demonstrated by intracavity-frequency-doubling a Q-switched diode-side-pumped Nd:YAG laser with a type II lithium triborate (LBO) crystal in a straight plano-concave cavity. An average power of 69.2 W at 532 nm was generated when electrical input power was 666 W. The corresponding electrical-to-green conversion efficiency is 10.4%. To the best of our knowledge, this is the highest electrical-to-green efficiency of second harmonic generation laser systems with side-pumped laser modules, ever reported. At about 66 W of green output power, the power fluctuation over 4 hours was better than +/-0.86%.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

Product?market positioning and prospector strategy : An analysis of strategic patterns from the resource?based perspective

Morgan, R.; Strong, C.; and McGuinness, T. (2003). Product-market positioning and prospector strategy: An analysis of strategic patterns from the resource-based perspective. European Journal of Marketing. 37(10), pp.1409-1439 RAE2008

Las interacciones organizacionales desde la visión ecológica: el mutualismo

No es requerido en este caso

Modelo de gestión del conocimiento para una empresa del sector de insumos químicos para la industria farmacéutica, cosmética y de alimentos: caso Disaromas S.A.

La creación de conocimiento al interior de las organizaciones es visible mediante la dirección adecuada del conocimiento de los individuos, sin embargo, cada individuo debe interactuar de tal manera que forme una red o sistema de conocimiento organizacional que consolide a largo plazo las empresas en el entorno en el que se desenvuelven. Este documento revisa elementos centrales acerca de la gestión de conocimiento visto desde varios autores y perspectivas e identifica puntos clave para diseñar un modelo de gestión de conocimiento para una empresa del sector de insumos químicos para la industria farmacéutica, cosmética y de alimentos de la ciudad de Bogotá.

Seed size and genotype effects on maize (Zea mays L.) yield under different technology levels

Final plant population in maize crop was used as a basis to identify the technology level of a given farmer. Final population of 50,000 plants/hectare was considered as an indication of a high technology level farmer; 35,000 of a medium, and 20,000 of a low technology level farmer. These populations were artificially obtained for the hybrids HT-2X, BR-201, and BR-205 from small, medium and large seeds. The results showed the triple cross hybrid HT-2X to be the most indicated for low technology level regions, due to its lesser sensitivity to variations in seed size and also to its significant outyielding of the other two hybrids. The double cross hybrids BR-201 and BR-205 exhibited much higher sensitivity to variations in seed size so that if they have to be used in a low technology region, the most recommended procedure would be to make use of the largest possible seeds. In conclusion, genotype and seed size seem to be factors capable of compensating for plant population reductions in maize crops. The more prolific hybrids and the largess seeds are more indicated for low technology level regions.

Evaluation of neighborhood impacts caused by companies of the high-tech industrial cluster of São Carlos, SP, Brazil

The purpose of this study was to develop a methodology for evaluating neighborhood impacts using a Geographic Information System (GIS) and to apply the procedures to the companies of the High-Technology Industrial Cluster of São Carlos. To this end, an evaluation was made of the neighborhood impacts on the physical environment, urban components, quality of life, and urban infrastructure using impact matrices, and the impacts were assigned scores according to type, order, magnitude and duration. Fifty one companies were examined based on data provided by the companies themselves and on field surveys. The impacts are represented spatially in proportional symbols maps, based on the spatial distribution of the companies in the urban area of the city of São Carlos and the areas of influence of each company. The application of the proposed methodology served to validate it and indicated that the neighborhood impacts caused by the companies of this study are related to each company's type of activity, its size, and its occupation of the area. © 2008 Journal of Urban and Environmental Engineering (JUEE). All rights reserved.

NIST, National Institute of Standards and Technology.

Mode of access: Internet.

Second to none : preserving America's military advantage through dual-use technology /

"February 1995."