High-performance electroabsorption modulator

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

于2010-11-23批量导入

zhangdi于2010-11-23 12:59:54导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T04:59:54Z (GMT). No. of bitstreams: 1 3666.pdf: 603030 bytes, checksum: 520a8c16c3bed831e9f04344c11de097 (MD5) Previous issue date: 2009

the National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the National Natural Science Foundation of China

Institute of Semiconductors, Chinese Academy of Sciences

the National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the National Natural Science Foundation of China