Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications
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2009
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Resumo |
The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices. The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices. 于2010-11-23批量导入 zhangdi于2010-11-23 12:59:56导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T04:59:56Z (GMT). No. of bitstreams: 1 3673.pdf: 389547 bytes, checksum: 720bd52de753f556ef4ea5d2632e00c5 (MD5) Previous issue date: 2009 the National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the Chinese Academy of Sciences Foundation Institute of Semiconductors,Chinese Academy of Sciences the National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the Chinese Academy of Sciences Foundation |
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Idioma(s) |
英语 |
Fonte |
Xie Jing;Liu Yunfei;Yang Jinling;Tang Longjuan;Yang Fuhua.Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications,半导体学报,2009,30(8):34-38 |
Palavras-Chave | #半导体材料 |
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期刊论文 |