Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO/TiO2 (rutile) heterojunction has been directly measured by Xray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 +/- 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 +/- 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO2 based field-effect transistors and dye-sensitized solar cells.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Calculation of Valence Subband Structures for Strained Quantum-Wells by Plane Wave Expansion Method Within 6 * 6 Luttinger-Kohn Model

The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6 * 6 Luttinger-Kohn model. The effect of the number and period of plane-waves used for expansion on the stability of energy eigenvalues is examined. For practical calculation, it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Configuration of the valence neutrons of B-17

The reaction cross section of B-17 on C-12 target at (43.7 +/- 2.4) MeV/u has been measured at the Radioactive Ion Beam Line in Lanzhou (RIBLL). The root-mean-square matter radius (R-rms) was deduced to be (2.92 +/- 0.10) fm, while the R-rms of the core and the valence neutron distribution are 2.28 fm and 5.98 fm respectively. Assuming a "core plus 2n" structure in B-17, the mixed configuration of (2s(1/2)) and (1d(5/2)) of the valence neutrons is studied and the s-wave spectroscopic factor is found to be (80 +/- 21)%.

Nanotubes of mixed-valence, transition metal compounds synthesized by solution phase approach

A solution-phase approach to synthesize four kinds of mixed-valence, transition metal compounds nanotube is described. The approach is based on the self-assembly of siloxane sol. The resulted production of mixed-valence, transition metal compounds share a common structural characteristic of tubular geometrical morphology, at least for the ones we studied. The results demonstrate that the synthesis strategy can be a general route for preparation of compound nanotubes. In addition, the size control of nanotubular materials can be easily achieved through varying the ionic strength of solution. Based on the strategy, the diameters of ultrathin Ru-Fe nanotubes can be easily tuned between 100 nm and 800 nm.

Self-assembly of a water chain with tetrameric and decameric clusters in the channel of a mixed-valence (CuCuII)-Cu-I complex

The reaction of Cu(BF4)(2) with pyridine-2,6-dicarboxylic acid (H(2)pydc) and trans-1,2-bis(4-pyridyl)ethylene (bpe) under hydrothermal conditions afforded a porous mixed-valence (CuCuII)-Cu-I coordination polymer. Coexistence of tetrameric and decameric water clusters within the channels of the complex leads to a novel water chain. The metal-organic framework provides both hydrophilic and hydrophobic environments for stabilizing the clusters and retains its integrity upon dehydration and rehydration.

The first discrete mixed-valence hexadecavanadate host shell cluster anions: hydrothermal synthesis, structure and characterization of [V16O38(Cl)](8-)

A new compound, [NH4](2)[Zn(phen)(3)](2)[Zn(phen)(2)(H2O)(2)][V16O38(Cl)] (.) 5H(2)O (1), was synthesized in the hydrothermal condition. The "naked" [V16O38(Cl)](8-) is the first observation with host shell structure in polyoxovanadate chemistry.

Effect of valence of copper in La2-xThxCuO4 on NO decomposition reaction

NO decomposition reaction was investigated over La2-xThxCuO4, in which the valence of copper was controlled by Th substitution and was characterized by XPS measurement. A close correlation between the valence of copper and the activity was observed. The activity increased with the decrease of the average oxidation number of copper, and increased with the increase of Cu+ content, suggesting that the transition metal with low valence (Cu+) is active for the reaction in the present cases.

Valence of elements in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4)

Valence of elements in HgBa2Can-1CunO2n+2+delta (n=1, 2, 3, 4) (both argon and oxygen annealed samples) were calculated. The result indicated for both argon and oxygen annealed samples, Hg had the lowest valence for the highest T-c sample. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produce more carriers than argon annealed samples.

Luminescence centers and valence change of Eu2+ in KCaF3

The nature of the emission centers and the valence change of Eu2+ in KCaF3:Eu2+ depends strongly on preparation conditions. Experimental results show that there are two different d-->f emission bands, located at 425 and 510 nm, respectively. Their origin, relationship, and the effect of doping concentration on them are discussed. A Eu2+-Eu3+ valence change process is proposed. (C) 2000 Elsevier Science Ltd. All rights reserved.