DEFORMATION POTENTIALS AT THE TOP OF VALENCE BANDS IN SEMICONDUCTORS - ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Autoria(s): GU ZQ; LI MF; WANG JQ; WANG BS
Data(s)

1990
Identificador

http://ir.semi.ac.cn/handle/172111/14407

http://www.irgrid.ac.cn/handle/1471x/101238
Idioma(s)

英语
Fonte

GU ZQ; LI MF; WANG JQ; WANG BS.DEFORMATION POTENTIALS AT THE TOP OF VALENCE BANDS IN SEMICONDUCTORS - ABINITIO PSEUDOPOTENTIAL CALCULATIONS,PHYSICAL REVIEW B,1990,41(12):8333-8339
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital