Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
| Data(s) |
2010
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| Resumo |
The valence band offset (VBO) of MgO/TiO2 (rutile) heterojunction has been directly measured by Xray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 +/- 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 +/- 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO2 based field-effect transistors and dye-sensitized solar cells. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T00:40:55Z No. of bitstreams: 1 Valence band offset of MgO-TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T00:58:14Z (GMT) No. of bitstreams: 1 Valence band offset of MgO-TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (MD5) Made available in DSpace on 2010-08-17T00:58:14Z (GMT). No. of bitstreams: 1 Valence band offset of MgO-TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy.pdf: 186221 bytes, checksum: 791deec6e93b6033814be063315a6c12 (MD5) Previous issue date: 2010 This work was supported by National Science Foundation of China (Nos. 60776015, 60976008), the Special Funds for Major State Basic Research Project (973 Program) of China (No. 2006CB604907), and the 863 High Technology R&D Program of China (Nos. 2007AA03Z402 and 2007AA03Z451). 其它 This work was supported by National Science Foundation of China (Nos. 60776015, 60976008), the Special Funds for Major State Basic Research Project (973 Program) of China (No. 2006CB604907), and the 863 High Technology R&D Program of China (Nos. 2007AA03Z402 and 2007AA03Z451). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zheng GL (Zheng Gaolin), Wang J (Wang Jun), Liu XL (Liu Xianglin), Yang AL (Yang Anli), Song HP (Song Huaping), Guo Y (Guo Yan), Wei HY (Wei Hongyuan), Jiao CM (Jiao Chunmei), Yang SY (Yang Shaoyan), Zhu QS (Zhu Qinsheng), Wang ZG (Wang Zhanguo).Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy.APPLIED SURFACE SCIENCE,2010,256(23):7327-7330 |
| Palavras-Chave | #半导体材料 #MgO #Rutile #Band offset #X-ray photoelectron spectroscopy #Gate dielectric #Dye-sensitized solar cells |
| Tipo |
期刊论文 |
