Holistic fisheries management: combining macroecology, ecology, and evolutionary biology

Ecosystem-based management is one of many indispensable components of objective, holistic management of human impacts on nonhuman systems. By itself, however, ecosystem-based management carries the same risks we face with other forms of current management; holism requires more. Combining single-species and ecosystem approaches represents progress. However, it is now recognized that management also needs to be evosystem-based. In other words, management needs to account for all coevolutionary and evolutionary interactions among all species; otherwise we fall far short of holism. Fully holistic practices are quite distinct from the approaches to the management of fisheries that are applied today. In this paper, we show how macroecological patterns can guide management consistently, objectively, and holistically. We present one particular macroecological pattern with two applications. The first application is a case study of fisheries from the Baltic Sea involving historical data for two species; the second involves a sample of 44 species of primarily marine fish worldwide. In both cases we evaluate historical fishing rates and determine holistic/systemic sustainable single-species fishing rates to illustrate that conventional fisheries management leads to much more extensive and pervasive overfishing than currently realized; harvests are, on average, over twenty-fold too large to be fully sustainable. In general, our approach involves not only the sustainability of fisheries and related resources but also the sustainability of the ecosystems and evosystems in which they occur. Using macroecological patterns accomplishes four important goals: 1) Macroecology becomes one of the interdisciplinary components of management. 2) Sustainability becomes an option for harvests from populations of individual species, species groups, ecosystems, and the entire marine environment. 3) Policies and goals are reality-based, holistic, or fully systemic; they account for ecological as well as evolutionary factors and dynamics (including management itself). 4) Numerous management questions can be addressed.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 x 10(-6) A/cm(2) at 0 V bias and 2.24 x 10(-4) A/cm(2) at a reverse bias of 5 V. At a wavelength of 1.55 mu m, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 mu m diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

Si_(0.75)Ge_(0.25)虚衬底上应变补偿Si/Si_(0.62)Ge_(0.38)量子阱发光

由于Si/SiGe异质结构的带阶差主要发生在价带,为实现高效率的发光,本文从理论上设计了在硅基Si_(1-x) Ge_x虚衬底上外延应变补偿的Si/S_(1-y) Ge_y(y>x)量子阱的能带结构,将量子阱对电子的限制势垒提高到100meV以上.在实验上,采用300℃生长的Ge量子点插入层,制备出薄的SiGe驰豫缓冲层(虚衬底),表面Ge组份达到0.25,表面粗糙度小于2nm,驰豫度接近100%.在我们制备的SiGe缓冲层上外延了应变补偿SiGe/Si多量子阱结构,并初步研究了其发光特性.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.

Comparison doses of secondary neutron with the heavy ions in a 75-mev/n heavy ion beam

国科图

科尔沁沙地75种植物结种量种子形态和植物生活型关系研究

研究了科尔沁沙地75种植物的结种量、种子形态、植物生活型关系。结果表明,灌木和半灌木(小半灌木)的结种量比草本植物的大;就草本植物而言,多年生植物的结种量较一、二年生植物的小;植物结种量和种子重量之间存在显著负相关;植物结种量和种子形状之间存在显著负相关,即种子越接近圆球形,结种量越大;占绝大多数的草甸植物结种量相对较小;而在物种数占总物种数的百分数相近时,草原植物的结种量最小,沙生植物的最大,杂草植物居中。