Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler
| Data(s) |
2004
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| Resumo |
A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz. A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz. 于2010-11-23批量导入 zhangdi于2010-11-23 13:05:52导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:05:52Z (GMT). No. of bitstreams: 1 4677.pdf: 291152 bytes, checksum: 26011fd236ca9de7302726515ebb5053 (MD5) Previous issue date: 2004 Institute of Semiconductors,The Chinese Academy of Sciences;School of Laser Engineering,Beijing University of Technology |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang Yonggang;Ma Xiaoyu;Zhang Bingyuan;Chen Meng;Li Gang;Zhang Zhigang.Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler,半导体学报,2004,25(12):1595-1598 |
| Palavras-Chave | #半导体器件 |
| Tipo |
期刊论文 |
