Orbital evolution and orbital phase resolved spectroscopy of the HMXB pulsar 4U 1538-52 with RXTE-PCA and BeppoSAX

We report here results from detailed timing and spectral studies of the high mass X-ray binary pulsar 4U 1538-52 over several binary periods using observations made with the Rossi X-ray Timing Explorer (RXTE) and BeppoSAX satellites. Pulse timing analysis with the 2003 RXTE data over two binary orbits confirms an eccentric orbit of the system. Combining the orbitial parameters determined from this observation with the earlier measurements we did not find any evidence of orbital decay in this X-ray binary. We have carried out orbital phase resolved spectroscopy to measure changes in the spectral parameters with orbital phase, particularly the absorption column density and the iron line flux. The RXTE-PCA spectra in the 3-20 keV energy range were fitted with a power law and a high energy cut-off along with a Gaussian line at similar to 6.4 keV, whereas the BeppoSAX spectra needed only a power law and Gaussian emission line at similar to 6.4keV in the restricted energy range of 0.3-10.0 keV. An absorption along the line of sight was included for both the RXTE and BeppoSAX data. The variation of the free spectral parameters over the binary orbit was investigated and we found that the variation of the column density of absorbing material in the line of sight with orbital phase is in reasonable agreement with a simple model of a spherically symmetric stellar wind from the companion star.

Combustion synthesis approach for spectral tuning of Eu doped CaAl2O4 phosphors

Despite being a particularly good emitter, use of divalent Eu has been seriously limited. This is because severe reducing environments or special hosts are needed during synthesis of divalent Eu containing phosphors. In this work we stabilize Eu in its 2+ state (in CaAl2O4) using an open-air solution combustion reaction. The impact of fuel (F) to oxidizer (O) molar ratios (F/O = 0.5-2.0) on luminescence properties is explored. Chromaticity of Eu:CaAl2O4 depends sensitively on the F/O ratio. In general, higher F/O inhibits Eu3+ and promotes Eu2+ formation, which in turn improves the quality of the blue phosphor. EPR spectra show inhomogeneous broadening effects with the increase in F/O ratio, which suggests that disorder creation is promoted when F/O is increase. This is also confirmed by an increase in emission line width in PL spectra, when F/O is increased. (C) 2013 Elsevier B.V. All rights reserved.

Orbital phase resolved spectroscopy of GX 301-2 with MAXI

GX 301-2, a bright high-mass X-ray binary with an orbital period of 41.5 d, exhibits stable periodic orbital intensity modulations with a strong pre-periastron X-ray flare. Several models have been proposed to explain the accretion at different orbital phases, invoking accretion via stellar wind, equatorial disc, and accretion stream from the companion star. We present results from exhaustive orbital phase resolved spectroscopic measurements of GX 301-2 using data from the Gas Slit Camera onboard MAXI. Using spectroscopic analysis of the MAXI data with unprecedented orbital coverage for many orbits continuously, we have found a strong orbital dependence of the absorption column density and equivalent width of the iron emission line. A very large equivalent width of the iron line along with a small value of the column density in the orbital phase range 0.10-0.30 after the periastron passage indicates the presence of high density absorbing matter behind the neutron star in this orbital phase range. A low energy excess is also found in the spectrum at orbital phases around the pre-periastron X-ray flare. The orbital dependence of these parameters are then used to examine the various models about mode of accretion on to the neutron star in GX 301-2.

Electric field induced short range to long range structural ordering and its influence on the Eu+3 photoluminescence in the lead-free ferroelectric Na1/2Bi1/2TiO3

Eu+3 was incorporated into the lattice of a lead-free ferroelectric Na1/2Bi1/2TiO3 (NBT) as per the nominal formula Na0.5Bi0.5-xEuxTiO3. This system was investigated with regard to the Eu+3 photoluminescence (PL) and structural behaviour as a function of composition and electric field. Electric field was found to irreversibly change the features in the PL spectra and also in the x-ray diffraction patterns below the critical composition x = 0.025. Detailed analysis revealed that below the critical composition, electric field irreversibly suppresses the structural heterogeneity inherent of the host matrix NBT and brings about a long range ferroelectric state with rhombohedral (R3c) distortion. It is shown that the structural disorder on the nano-scale opens a new channel for radiative transition which manifests as a new emission line branching off from the main D-5(0)-> F-7(0) line along with a concomitant change in the relative intensity of the other crystal field induced Stark lines with different J values. The study suggests that Eu+3 luminescence can be used to probe the relative degree of field induced structural ordering in relaxor ferroelectrics and also in high performance piezoelectric alloys where electric field couples very strongly with the lattice and structural degrees of freedom. (C) 2015 AIP Publishing LLC.

Detailed properties of high redshift galaxies

Galaxies evolve throughout the history of the universe from the first star-forming sources, through gas-rich asymmetric structures with rapid star formation rates, to the massive symmetrical stellar systems observed at the present day. Determining the physical processes which drive galaxy formation and evolution is one of the most important questions in observational astrophysics. This thesis presents four projects aimed at improving our understanding of galaxy evolution from detailed measurements of star forming galaxies at high redshift.

We use resolved spectroscopy of gravitationally lensed z ≃ 2 - 3 star forming galaxies to measure their kinematic and star formation properties. The combination of lensing with adaptive optics yields physical resolution of ≃ 100 pc, sufficient to resolve giant Hii regions. We find that ~ 70 % of galaxies in our sample display ordered rotation with high local velocity dispersion indicating turbulent thick disks. The rotating galaxies are gravitationally unstable and are expected to fragment into giant clumps. The size and dynamical mass of giant Hii regions are in agreement with predictions for such clumps indicating that gravitational instability drives the rapid star formation. The remainder of our sample is comprised of ongoing major mergers. Merging galaxies display similar star formation rate, morphology, and local velocity dispersion as isolated sources, but their velocity fields are more chaotic with no coherent rotation.

We measure resolved metallicity in four lensed galaxies at z = 2.0 − 2.4 from optical emission line diagnostics. Three rotating galaxies display radial gradients with higher metallicity at smaller radii, while the fourth is undergoing a merger and has an inverted gradient with lower metallicity at the center. Strong gradients in the rotating galaxies indicate that they are growing inside-out with star formation fueled by accretion of metal-poor gas at large radii. By comparing measured gradients with an appropriate comparison sample at z = 0, we demonstrate that metallicity gradients in isolated galaxies must flatten at later times. The amount of size growth inferred by the gradients is in rough agreement with direct measurements of massive galaxies. We develop a chemical evolution model to interpret these data and conclude that metallicity gradients are established by a gradient in the outflow mass loading factor, combined with radial inflow of metal-enriched gas.

We present the first rest-frame optical spectroscopic survey of a large sample of low-luminosity galaxies at high redshift (L < L*, 1.5 < z < 3.5). This population dominates the star formation density of the universe at high redshifts, yet such galaxies are normally too faint to be studied spectroscopically. We take advantage of strong gravitational lensing magnification to compile observations for a sample of 29 galaxies using modest integration times with the Keck and Palomar telescopes. Balmer emission lines confirm that the sample has a median SFR ∼ 10 M_sun yr^−1 and extends to lower SFR than has been probed by other surveys at similar redshift. We derive the metallicity, dust extinction, SFR, ionization parameter, and dynamical mass from the spectroscopic data, providing the first accurate characterization of the star-forming environment in low-luminosity galaxies at high redshift. For the first time, we directly test the proposal that the relation between galaxy stellar mass, star formation rate, and gas phase metallicity does not evolve. We find lower gas phase metallicity in the high redshift galaxies than in local sources with equivalent stellar mass and star formation rate, arguing against a time-invariant relation. While our result is preliminary and may be biased by measurement errors, this represents an important first measurement that will be further constrained by ongoing analysis of the full data set and by future observations.

We present a study of composite rest-frame ultraviolet spectra of Lyman break galaxies at z = 4 and discuss implications for the distribution of neutral outflowing gas in the circumgalactic medium. In general we find similar spectroscopic trends to those found at z = 3 by earlier surveys. In particular, absorption lines which trace neutral gas are weaker in less evolved galaxies with lower stellar masses, smaller radii, lower luminosity, less dust, and stronger Lyα emission. Typical galaxies are thus expected to have stronger Lyα emission and weaker low-ionization absorption at earlier times, and we indeed find somewhat weaker low-ionization absorption at higher redshifts. In conjunction with earlier results, we argue that the reduced low-ionization absorption is likely caused by lower covering fraction and/or velocity range of outflowing neutral gas at earlier epochs. This result has important implications for the hypothesis that early galaxies were responsible for cosmic reionization. We additionally show that fine structure emission lines are sensitive to the spatial extent of neutral gas, and demonstrate that neutral gas is concentrated at smaller galactocentric radii in higher redshift galaxies.

The results of this thesis present a coherent picture of galaxy evolution at high redshifts 2 ≲ z ≲ 4. Roughly 1/3 of massive star forming galaxies at this period are undergoing major mergers, while the rest are growing inside-out with star formation occurring in gravitationally unstable thick disks. Star formation, stellar mass, and metallicity are limited by outflows which create a circumgalactic medium of metal-enriched material. We conclude by describing some remaining open questions and prospects for improving our understanding of galaxy evolution with future observations of gravitationally lensed galaxies.

Did galaxies reionize the universe?

The epoch of reionization remains one of the last uncharted eras of cosmic history, yet this time is of crucial importance, encompassing the formation of both the first galaxies and the first metals in the universe. In this thesis, I present four related projects that both characterize the abundance and properties of these first galaxies and uses follow-up observations of these galaxies to achieve one of the first observations of the neutral fraction of the intergalactic medium during the heart of the reionization era.

First, we present the results of a spectroscopic survey using the Keck telescopes targeting 6.3 < z < 8.8 star-forming galaxies. We secured observations of 19 candidates, initially selected by applying the Lyman break technique to infrared imaging data from the Wide Field Camera 3 (WFC3) onboard the Hubble Space Telescope (HST). This survey builds upon earlier work from Stark et al. (2010, 2011), which showed that star-forming galaxies at 3 < z < 6, when the universe was highly ionized, displayed a significant increase in strong Lyman alpha emission with redshift. Our work uses the LRIS and NIRSPEC instruments to search for Lyman alpha emission in candidates at a greater redshift in the observed near-infrared, in order to discern if this evolution continues, or is quenched by an increase in the neutral fraction of the intergalactic medium. Our spectroscopic observations typically reach a 5-sigma limiting sensitivity of < 50 AA. Despite expecting to detect Lyman alpha at 5-sigma in 7-8 galaxies based on our Monte Carlo simulations, we only achieve secure detections in two of 19 sources. Combining these results with a similar sample of 7 galaxies from Fontana et al. (2010), we determine that these few detections would only occur in < 1% of simulations if the intrinsic distribution was the same as that at z ~ 6. We consider other explanations for this decline, but find the most convincing explanation to be an increase in the neutral fraction of the intergalactic medium. Using theoretical models, we infer a neutral fraction of X_HI ~ 0.44 at z = 7.

Second, we characterize the abundance of star-forming galaxies at z > 6.5 again using WFC3 onboard the HST. This project conducted a detailed search for candidates both in the Hubble Ultra Deep Field as well as a number of additional wider Hubble Space Telescope surveys to construct luminosity functions at both z ~ 7 and 8, reaching 0.65 and 0.25 mag fainter than any previous surveys, respectively. With this increased depth, we achieve some of the most robust constraints on the Schechter function faint end slopes at these redshifts, finding very steep values of alpha_{z~7} = -1.87 +/- 0.18 and alpha_{z~8} = -1.94 +/- 0.23. We discuss these results in the context of cosmic reionization, and show that given reasonable assumptions about the ionizing spectra and escape fraction of ionizing photons, only half the photons needed to maintain reionization are provided by currently observable galaxies at z ~ 7-8. We show that an extension of the luminosity function down to M_{UV} = -13.0, coupled with a low level of star-formation out to higher redshift, can fit all available constraints on the ionization history of the universe.

Third, we investigate the strength of nebular emission in 3 < z < 5 star-forming galaxies. We begin by using the Infrared Array Camera (IRAC) onboard the Spitzer Space Telescope to investigate the strength of H alpha emission in a sample of 3.8 < z < 5.0 spectroscopically confirmed galaxies. We then conduct near-infrared observations of star-forming galaxies at 3 < z < 3.8 to investigate the strength of the [OIII] 4959/5007 and H beta emission lines from the ground using MOSFIRE. In both cases, we uncover near-ubiquitous strong nebular emission, and find excellent agreement between the fluxes derived using the separate methods. For a subset of 9 objects in our MOSFIRE sample that have secure Spitzer IRAC detections, we compare the emission line flux derived from the excess in the K_s band photometry to that derived from direct spectroscopy and find 7 to agree within a factor of 1.6, with only one catastrophic outlier. Finally, for a different subset for which we also have DEIMOS rest-UV spectroscopy, we compare the relative velocities of Lyman alpha and the rest-optical nebular lines which should trace the cites of star-formation. We find a median velocity offset of only v_{Ly alpha} = 149 km/s, significantly less than the 400 km/s observed for star-forming galaxies with weaker Lyman alpha emission at z = 2-3 (Steidel et al. 2010), and show that this decrease can be explained by a decrease in the neutral hydrogen column density covering the galaxy. We discuss how this will imply a lower neutral fraction for a given observed extinction of Lyman alpha when its visibility is used to probe the ionization state of the intergalactic medium.

Finally, we utilize the recent CANDELS wide-field, infra-red photometry over the GOODS-N and S fields to re-analyze the use of Lyman alpha emission to evaluate the neutrality of the intergalactic medium. With this new data, we derive accurate ultraviolet spectral slopes for a sample of 468 3 < z < 6 star-forming galaxies, already observed in the rest-UV with the Keck spectroscopic survey (Stark et al. 2010). We use a Bayesian fitting method which accurately accounts for contamination and obscuration by skylines to derive a relationship between the UV-slope of a galaxy and its intrinsic Lyman alpha equivalent width probability distribution. We then apply this data to spectroscopic surveys during the reionization era, including our own, to accurately interpret the drop in observed Lyman alpha emission. From our most recent such MOSFIRE survey, we also present evidence for the most distant galaxy confirmed through emission line spectroscopy at z = 7.62, as well as a first detection of the CIII]1907/1909 doublet at z > 7.

We conclude the thesis by exploring future prospects and summarizing the results of Robertson et al. (2013). This work synthesizes many of the measurements in this thesis, along with external constraints, to create a model of reionization that fits nearly all available constraints.

Effects of Yb concentration on the fluorescence spectra of Yb-doped YAlO3 single crystals

0.5 at.% Yb:YAlO3(YAP), 5 at.% Yb:YAP and 15 at.% Yb:YAP were grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and their emission line shape was calculated using the method of reciprocity. It was observed that the fluorescence spectra changed appreciably with the increasing of Yb concentration. For 0.5 at.% Yb:YAP, the line shape of fluorescence is very similar with the calculated emission line shape; with the increasing of Yb doping concentration, the line shape of fluorescence is very different from the calculated emission line shape. These phenomena are caused by the strong self-absorption at 979 and 999 nm for Yb:YAP. (c) 2005 Elsevier B.V. All rights reserved.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure

The lifetimes of a series of N-related photoluminescence lines (A(2)-A(6)) in GaAs1-xNx (x=0.1%) were studied under hydrostatic pressures at similar to 30 K. The lifetimes of A(5) and A(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 GPa to more than 20 ns at 0.92 GPa for A(5) and from 3.2 ns at 0.63 GPa to 10.8 ns at 0.92 GPa for A(6). The lifetime is found to be closely correlated with the binding energy of the N impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from A(2) to A(6). (c) 2006 American Institute of Physics.

Photoluminescence of rapid-thermal annealed Mg-doped GaN films

We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition, The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions, The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

High-quality GaN grown by gas-source MBE

High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.

Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy

Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.

Broad-spectrum and long-lifetime emissions of Nd3+ ions in lead fluorosilicate glass

A novel Nd3+-doped lead fluorosilicate glass (NPS glass) is prepared by a two-step melting process. Based on the absorption spectrum a Judd-Ofelt theory analysis is made. The emission line width of NPS glass is 44.2nm. The fluorescence decay lifetime of the 4F3/2 level is 586±20μsec, and the stimulated emission cross-section is 0.87×10-20cm2 at 1056nm. A laser oscillation is occurred at 1062nm when pumped by 808nm Diode Laser. The slope efficiency is 23.7% with a 415mJ threshold. It is supposed that NPS glass is a good candidate for using in ultra-short pulse generation and amplification by the broad emission bandwidth and long fluorescence lifetime.

High-quality GaN grown by gas-source MBE

High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science.