High-quality GaN grown by gas-source MBE
Data(s) |
2001
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Resumo |
High-quality GaN epilayers were consistently obtained using a home-made gas-sourer MBE system on sapphire substrates. Room-temperature electron mobility of the grown GaN film is 300 cm(2)/V s with a background electron concentration as low as 2 x 10(17) cm(-3) The full-width at half-maximum of the GaN (0 0 0 2) double-crystal X-ray rocking curve is 6 arcmin. At low temperature (3.5 K), the FWHM of the: near-band-edge photoluminescence emission line is 10 meV. Furthermore, using piezoelectric effect alone with the high-quality films, two-dimensional electron gas was formed in a GaN/AlN/GaN/sapphire structure. Its room-temperature and low-temperature (77 K) electron mobility is 680 cm(2)/V s and 1700 cm(2)/V s, and the corresponding sheet electron density is 3.2 x 10(13) and 2.6 x 10(13) cm(-2), respectively. (C) 2001 Published by Elsevier Science. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY .High-quality GaN grown by gas-source MBE ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):386-389 |
Palavras-Chave | #半导体材料 #characterization #molecular beam epitaxy #gallium compounds #nitrides #piezoelectric materials #semiconducting gallium compounds #MOLECULAR-BEAM EPITAXY #HETEROSTRUCTURES #SAPPHIRE #DIODES |
Tipo |
期刊论文 |