Electrically Driven InAs Quantum-Dot Single-Photon Sources

Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

National Natural Science Foundation of China 60625405 10734060National Basic Research Programme of China 2006CB921504 Supported by the National Natural Science Foundation of China under Grant Nos 60625405 and 10734060, and the National Basic Research Programme of China under Grant No 2006CB921504.