Synthesis and characterization of spherical and rod like nanocrystalline Nd2O3 phosphors

Spherical and rod like nanocrystalline Nd2O3 phosphors have been prepared by solution combustion and hydrothermal methods respectively The Powder X-ray diffraction (PXRD) results confirm that hexagonal A-type Nd2O3 has been obtained with calcination at 900 C for 3 h and the lattice parameters have been evaluated by Rietveld refinement Surface morphology of Nd2O3 phosphors show the formation of nanorods in hydrothermal synthesis whereas spherical particles in combustion method TEM results also confirm the same Raman studies show major peaks which are assigned to F-g and combination of A(g) + E-g modes The PL spectrum shows a series of emission bands at similar to 326-373 nm (UV) 421-485 nm (blue) 529-542 nm (green) and 622 nm (red) The UV blue green and red emission in the PL spectrum indicates that Nd2O3 nanocrystals are promising for high performance materials and white light emitting diodes (LEDs) (C) 2010 Elsevier B V All rights reserved

Simulation Blocks for TOSSIM-T2"

We develop several hardware and software simulation blocks for the TinyOS-2 (TOSSIM-T2) simulator. The choice of simulated hardware platform is the popular MICA2 mote. While the hardware simulation elements comprise of radio and external flash memory, the software blocks include an environment noise model, packet delivery model and an energy estimator block for the complete system. The hardware radio block uses the software environment noise model to sample the noise floor.The packet delivery model is built by establishing the SNR-PRR curve for the MICA2 system. The energy estimator block models energy consumption by Micro Controller Unit(MCU), Radio,LEDs, and external flash memory. Using the manufacturer’s data sheets we provide an estimate of the energy consumed by the hardware during transmission, reception and also track several of the MCUs states with the associated energy consumption. To study the effectiveness of this work, we take a case study of a paper presented in [1]. We obtain three sets of results for energy consumption through mathematical analysis, simulation using the blocks built into PowerTossim-T2 and finally laboratory measurements. Since there is a significant match between these result sets, we propose our blocks for T2 community to effectively test their application energy requirements and node life times.

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm(2) and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm(2) were achieved. We obtained luminance of 5993 cd/m(2) when current density was 140 mA/cm(2). The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength. (C) 2012 Elsevier B.V. All rights reserved.

Photoluminescence properties of Eu3+-activated CaMoO4 phosphors for WLEDs applications and its Judd-Ofelt analysis

A series of scheelite-type Eu3+-activated CaMoO4 phosphors were synthesized by the nitrate-citrate gel combustion method. All the compounds crystallized in the tetragonal structure with space group I4(1)/a (No. 88). FESEM results reveal the spherical-like morphology. The CaMoO4 phosphor exhibited broad emission centered at 500 nm under the excitation of 298 nm wavelength, while Eu3+-activated CaMoO4 shows an intense characteristic red emission peak at 615 nm at different excitation wavelengths, due to D-5(0) -> F-7(2) transition of Eu3+ ions. The intensities of transitions between different J levels depend on the symmetry of the local environment of Eu3+ ions and were estimated using the Judd-Ofelt analysis. The high asymmetric ratio revealed that Eu3+ occupies sites with a low symmetry and without an inversion center. The CIE chromaticity co-ordinates (x, y) were calculated from emission spectra, and the values were close to the NTSC standard. Therefore, the present phosphor is highly useful for LEDs applications.

Facile synthesis of PbWO4: Applications in photoluminescence and photocatalytic degradation of organic dyes under visible light

Stolzite polymorph of PbWO4 catalyst was prepared by the facile room temperature precipitation method. Structural parameters were refined by the Rietveld analysis using powder X-ray data. PbWO4 was crystallized in the scheelite-type tetragonal structure with space group I4(1)/a (No. 88). Field emission scanning electron microscopy revealed leaf like morphology. Photoluminescence spectra exhibit broad blue emission (425 nm) under the excitation of 356 nm. The photocatalytic degradation of Methylene blue, Rhodamine B and Methyl orange dyes were measured under visible illumination. The 100% dye degradation was observed for MB and RhB dyes within 60 and 105 min. The rate constant was found to be in the decreasing order of MB > RhB > MO which followed the 1st order kinetic mechanism. Therefore, PbWO4 can be a potential candidate for blue component in white LEDs and also acts as a catalyst for the treatment of toxic and non-biodegradable organic pollutants in water. (C) 2014 Elsevier B.V. All rights reserved.

Facile green fabrication of iron-doped cubic ZrO2 nanoparticles by Phyllanthus acidus: Structural, photocatalytic and photoluminescent properties

Cubic ZrO2: Fe3+ (0.5-4 mol%) nanoparticles (NPs) were synthesized via bin-inspired, inexpensive and simple route using Phyllanthus acidus as fuel. PXRD, SEM, TEM, FTIR, UV absorption and PL studies were performed to ascertain the formation of NPs. Rietveld analysis confirmed the formation of cubic structure. The influence of Fe3+ on the structure, morphology, UV absorption, PL emission and photocatalytic activity of NPs were investigated. The CIE chromaticity coordinates (0.36, 0.41) show that NPs could be a promising candidate for white LEDs. The influence of Fe3+ on ZrO2 matrix for photocatalytic degradation of AO7 was evaluated under UVA and Sunlight irradiation. The enhanced photocatalytic activity of spherical shaped ZrO2: Fe3+ (2 mol%) under UVA light was attributed to dopant concentration, crystallite size, narrow band gap, textural properties and capability for reducing the electron-hole pair recombination. The trend of inhibitory effect in the presence of different radical scavengers were followed the order SO42- > Cl- > C2H5OH > HCO3- > CO32-. The recycling catalytic ability of the ZrO2: Fe3+ (2 mol%) was also evaluated with a negligible decrease in the degradation efficiency even after the sixth successive run. (C) 2014 Elsevier B.V. All rights reserved.

Efficient Solid-State Light-Emitting CuCdS Nanocrystals Synthesized in Air

Semiconductor nanocrystals (NCs) possess high photoluminescence (PL) typically in the solution phase. In contrary, PL rapidly quenches in the solid state. Efficient solid state luminescence can be achieved by inducing a large Stokes shift. Here we report on a novel synthesis of compositionally controlled CuCdS NCs in air avoiding the usual complexity of using inert atmosphere. These NCs show long-range color tunability over the entire visible range with a remarkable Stokes shift up to about 1.25eV. Overcoating the NCs leads to a high solid-state PL quantum yield (QY) of ca. 55% measured by using an integrating sphere. Unique charge carrier recombination mechanisms have been recognized from the NCs, which are correlated to the internal NC structure probed by using extended X-ray absorption fine structure (EXAFS) spectroscopy. EXAFS measurements show a Cu-rich surface and Cd-rich interior with 46% Cu-I being randomly distributed within 84% of the NC volume creating additional transition states for PL. Color-tunable solid-state luminescence remains stable in air enabling fabrication of light-emitting diodes (LEDs).

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (11-20) a-plane In0.17Ga0.83N epilayer grown on a-plane (11-20) GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of InxGa1-xN alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region. (C) 2015 Author(s).

Transport Phenomena in Ammonothermal Growth of Gallium Nitride

GaN can be used to fabricate blue/green/UV LEDs and high temperature, high power electronic devices. Ideal substrates are needed for high quality III-nitride epitaxy, which is an essential step for the manufacture of LEDs. GaN substrates are ideal to be lattice matched and isomorphic to nitride-based films. Bulk single crystals of GaN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or azide is used to attack a bulk nitride feedstock at temperatures from 200 - 500癈 and pressures from 1 - 4 kbar. Baffle design is essential for successful growth of GaN crystals. Baffle is used to separate the dissolving zone from the growth zone, and to maintain a temperature difference between the two zones. For solubility curve with a positive coefficient with respect to temperature, the growth zone is maintained at a lower temperature than that in the dissolving zone, thus the nutrient becomes supersaturated in the growth zone. The baffle opening is used to control the mixing of nutrients in the two zones, thus the transfer of nutrient from the lower part to the upper part. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. We investigated the effects of baffle opening and position on the transport phenomena of nutrient from dissolving zone to the growth zone. Simulation data have been compared qualitatively with experimental data.

Los inicios de la vascología en Holanda: El Essai de grammaire de la langue basque de Willem J. van Eys (1865, 1867)

Ed. by Xabier Artiagoitia, Patxi Goenaga & Joseba A. Lakarra.

Avaliação dos métodos para análise da microinfiltração marginal em restaurações de resina composta classe V in vitro

O objetivo deste estudo foi comparar os resultados da microinfiltração marginal obtidos por diferentes meios de aquisição de imagens e métodos de mensuração da penetração de prata em restaurações de resina composta classe V, in vitro. Dezoito pré-molares humanos hígidos, recém extraídos, foram divididos em três grupos, de acordo com o tipo de instrumento para preparação cavitária utilizado. Grupo 1: ponta diamantada número 3100, em alta rotação. Grupo 2: broca carbide número 330, em alta rotação. Grupo 3: ponta CVDentus código 82137, em aparelho de ultrassom. Foram realizados preparos cavitários padronizados (3x4x2mm) classe V nas faces vestibular e lingual de todos os dentes, com margens oclusais em esmalte e cervicais em dentina/cemento. As cavidades foram restauradas com o sistema adesivo Solobond M (VOCO) e resina composta Grandio (VOCO), a qual foi inserida e fotoativada em três incrementos. Os corpos de prova ficaram imersos em água destilada por 24h a 37oC; receberam acabamento e polimento com discos SofLex (3M) e foram novamente armazenados em água destilada, por sete dias. Posteriormente, as superfícies dentárias foram coberta com duas camadas de esmalte para unhas vermelho, exceto as áreas adjacentes às restaurações. Os espécimes ficaram imersos em solução aquosa de nitrato de prata a 50% por 24h e em solução fotorreveladora por 2h e foram seccionados no sentido vestíbulo-lingual, passando pelo centro das restaurações, com disco diamantado em baixa rotação. As amostras foram polidas em politriz horizontal e analisadas por diferentes métodos. À extensão da microinfiltração foi atribuído escores de 0 a 3 através de análises por meio de estereomicroscópio tradicional e com leds e microscópio ótico. As imagens obtidas na lupa com leds e no microscópio ótico tiveram as áreas infiltradas medidas através do software AxioVision. O teste χ2 de McNemar-Bowker revelou concordância estatística entre estereomicroscópio tradicional e o com leds (p=0,809) durante análises semiquantitativas. Porém, houve diferenças significantes entre microscópio ótico e estereomicroscópios (p<0,001). Houve boa correlação entre análises semiquantitativas e quantitativas de acordo com o teste de Spearmann (p<0,001). O teste de Kruskall-Wallis não revelou diferenças estatisticamente significantes (p=0,174) entre os grupos experimentais na análise quantitativa por microscópio ótico, em esmalte. Ao contrário do que se observa com a mesma em lupa (p<0,001). Conclui-se que o método de atribuição de escores comumente aplicado com a lupa nos estudos da microinfiltração marginal é uma opção confiável para análise da microinfiltração.

Study on the hydrolytic property and thermal stability of LiAlO2 substrate

The hydrolytic property and thermal stability of LiAlO2 (LAO), important factors for its application, were examined by AFM and X-ray rocking curve. We found that H2O may be deleterious for LAO surface polishing when the root mean square (RMS) value is less than 1 nm. However, when the RMS value is more than 1 nm it may be useful for LAO polishing. (100)-plane LAO substrates are annealed in the range of 850-900 degrees C in flux N-2, Slick AlN layer probably is produced on the substrate surface. M-plane GaN layer has grown on the substrate by metal-organic chemical vapor deposition (MOCVD) method. Theses results show that LiAlO2 crystal is a promising substrate of fabricating high-efficiency LEDs by MOCVD. (c) 2006 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.