891 resultados para 977


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二脂酰甘油酰基转移酶 (DGAT; EC 2.3.1.20) 是催化三脂酰甘油(TAG)合成的最后也是最关键步骤的酶。TAG是真核细胞中最重要的能量存储形式。在植物中,TAG主要在种子、花粉和许多物种的果实中积累。然而,DGAT1基因的转录本也存在于植物的其它器官中,这些器官包括根、茎、叶、花瓣、花粉囊、未成熟的角果、幼苗以及正在发芽的种子等。迄今为止,许多针对DGAT1基因的研究都集中于DGAT1基因的表达在对种子油脂的积累以及对种子中TAG的脂肪酸组成所起的作用上。在本研究中,我们通过构建烟草DGAT1基因带有内含子的发卡RNA(hpRNA)结构,使之在转基因烟草植株中表达双链RNA(dsRNA),利用RNAi原理达到使烟草内源DGAT1基因沉默的目的。转基因沉默烟草植株的获得将会为更好地研究DGAT1基因的功能奠定基础。本实验不仅研究分析了DGAT1基因的抑制对烟草种子油脂积累的影响,还对表现出沉默性状的转基因植株Sil7的不同器官中TAG的含量以及DGAT1的转录水平等进行了研究分析。此外,通过对转基因烟草不同株系种子中的主要贮藏物质——油脂、蛋白质和糖的含量测定,初步揭示出在烟草种子中三者生物合成代谢之间存在的相关性。主要研究结果如下: 采用烟草DGAT1基因的第615~1293碱基之间679bp的片段构建了能表达发卡RNA(hpRNA)结构的表达载体,并转化烟草(Nicotiana tabacum)Wisconsin 38。Northern杂交分析发现,与野生型对照烟草(WT)相比,在沉默植株的花和发育状态种子中DGAT1基因的转录水平有很大降低,这表明该发卡结构能够高效率地引起烟草DGAT1基因的沉默。此外,在对Sil1至Sil12共12株转基因烟草进行油脂含量分析的结果表明,其中有8株表现出油脂降低的性状,转基因沉默效率达到67%。这表明:利用RNAi的方法可对目标基因进行特异降解来研究基因的功能,因此是一个在研究基因的表达功能上十分有效的方法,而且已成为植物基因工程的有力工具。 为了研究DGAT1基因的沉默对转基因植株不同器官的影响,本实验分析了转基因植株Sil7的不同器官中TAG的含量和脂肪酸组成,并采用RT-PCR方法对野生型对照和转基因植株中DGAT1基因的转录水平进行了比较分析。研究发现,转基因植株不同器官中DGAT1基因转录水平的降低与各器官中TAG含量的减少呈正相关。由此看来,植物中DGAT1的表达水平与植物的各个器官内TAG的含量之间存在着一定的对应关系。此外,在转基因植株Sil7不同器官中依然能够产生TAG,这说明或者DGAT1酶活性丧失而由其它的酶(如DGAT2和PDAT)参与TAG的合成,或者DGAT1酶活性只是部分地受到影响。本实验还对Sil7的根、茎、叶、花瓣和种子中TAG的脂肪酸组成进行了分析,结果发现,与烟草野生型对照相比,在Sil7的这些器官中,除种子中TAG的脂肪酸组成无明显变化外,其余器官中TAG的18:3/18:2脂肪酸比例均有明显升高。 对其中8株转基因烟草种子进行油脂含量分析发现,在转基因烟草中由于DGAT1基因的沉默引起种子中TAG含量的减少,从而引起了种子平均千粒重的下降。而在TAG含量和种子平均千粒重下降的同时,种子中其它贮藏物质-蛋白质和糖类的含量却增加了。该实验结果表明:在烟草种子中TAG的生物合成与蛋白质和糖类物质的合成之间存在着负的相关性。

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Background: Alzheimer's disease (AD) is a neurodegenerative disease with a higher prevalence in women. Expression of estrogen receptor 1 (ESR1) gene has been identified throughout the brain. Owing to the putative neuroprotective effects of estrogen, estro

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采用单层贴壁分化的方法在无血清条件下诱导同源饲养层培养的人胚胎干细胞定向分化,得到了高比例的神经前体细胞(97.5±0.83)%(P<0.05).这些神经前体细胞具有分化为神经元、星形胶质细胞和少突胶质细胞的能力.在长期的传代培养中发现,随着培养时间的延长,nestin阳性的神经前体细胞比例下降,同时发育能力也发生了变化.在传代培养的早期,神经前体细胞发育为神经元的比例很高,几乎没有胶质细胞分化出来.随着培养时间的延长,胶质细胞的比例逐渐上升.这与体内神经系统的发育过程非常相似.进一步研究发现具有bHLH (basic helix-loop-helix) 结构域的转录因子neurogenein2(Ngn2) 和Olig2可能在这一变化中起重要作用.因此,人胚胎干细胞来源的神经前体细胞能够模拟体内神经发育的模式,为在体外研究人的神经发育和再生医学奠定了基础.

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Molecular epidemiological investigation was conducted among injecting drug users (IDUs) (n = 11) and heterosexuals (n = 15) in Kunming, Yunnan Province of China. HIV-1 genotypes were determined based on the nucleotide sequences of 2.6-kb gag-RT region. The distribution of genotypes among IDUs was as follows: CRF07_BC (5/11) and CRF08_BC (5/11); subtype B' (1/11). Similarly, a majority of Kunming heterosexuals (14/15) were infected with CRF07_BC (4/15), CRF08_BC (6/15), or subtype B' (4/15), known to predominate among IDUs in China. This contrasts with trends in the coastal regions of China and surrounding southeastern Asian countries, where CRF01_AE predominates among heterosexuals. The heterosexual HIV-1 epidemic in Kunming thus appears to derive from the local IDU epidemic. Of note, subtype B' was the most prevalent strain among heterosexuals before 1997, while CRF07_BC and CRF08_BC became predominant in 2002, indicating a transition of HIV-1 genotype distribution between the early and the more recent samples from Kunming heterosexuals.

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This paper presents a wavelength coded optical timedomain reflectometry based on optical heterodyne technique. In this scheme, the probe and reference optical pulses have different wavelengths. This enables optical heterodyne detection to be used to improve the system performances significantly. We demonstrate a spatial resolution of 2.5 m within a range of 60 km in weak-reflection signal detection and direct observation of Brillouin scattering over a long optical fiber, suggesting online fiber sensing possible. The principle of wavelength coding is applicable to other systems like lidar and radar to increase receiver sensitivity and simplify system structure.

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We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

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With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

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Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low DC bias after optimization of the gas mixture.

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Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.

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We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

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该文利用线性密码分析对 L OKI97进行了攻击 ,结果显示 ,L OKI97的安全性并没有达到高级加密标准的要求 ;利用线性密码分析中的算法 1和 2 50 个明密文对 ,以 0 .977的成功率预测 92比特子密钥 ;利用线性密码分析中的算法 2和 2 4 5个明密文对 ,以 0 .96 7的成功率预测 LOKI97的种子密钥 .