Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal


Autoria(s): Ma XT (Ma Xiao-Tao); Zheng WH (Zheng Wan-Hua); Ren G (Ren Gang); Fan ZC (Fan Zhong-Chao); Chen CH (Chen Chang-Hui)
Data(s)

2007

Resumo

Inductively coupled plasma (ICP) etching of InP in Cl-2/BCl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional InP/InGaAsP photonic crystal. The etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. It is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the ICP power is increased. High aspect-ratio etching at the DC bias of 203 V is obtained. Eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low DC bias after optimization of the gas mixture.

Identificador

http://ir.semi.ac.cn/handle/172111/9678

http://www.irgrid.ac.cn/handle/1471x/64251

Idioma(s)

中文

Fonte

Ma, XT (Ma Xiao-Tao); Zheng, WH (Zheng Wan-Hua); Ren, G (Ren Gang); Fan, ZC (Fan Zhong-Chao); Chen, CH (Chen Chang-Hui) .Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal ,ACTA PHYSICA SINICA,FEB 2007,56 (2):977-981

Palavras-Chave #光电子学 #two-dimensional photonic crystal
Tipo

期刊论文