Accurate determination of electronic transition energy of carbon nanotubes from the resonant behavior of radial breathing modes and their overtones

The resonant Raman behavior of the radial breathing modes are very useful to analyze the electronic property of carbon nanotubes. We investigated the resonant behaviors of Stokes and anti-Stokes radial breathing mode and its overtone of a metallic nanotube, and show how to accurately determine the electronic transition energy of carbon nanotubes from radial breathing modes and their overtones. Based on the present results, the previously reported resonant Raman behavior of the radial breathing modes of SWINT bundles can be interpreted very well.

A transition layer model and its application to resonant tunneling in heterostructures

A transition layer model is proposed and used to calculate resonant tunneling in a double-barrier quantum well system. Compared with the ideal step of the potential at the interface, the studied system has transition layers that are composed by many thin rectangular barriers with a random height. It is found that these transition layers can improve the peak-to-valley ratio of the tunneling current and change the negative differential conductance.

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043]

Shear transformation zone volume determining ductile–brittle transition of bulk metallic glasses

Three-point bending experiments were performed on as-cast and annealed samples of Zr52.5Cu17.9Ni14.6Al10Ti5 (Vit105) bulk metallic glasses over a wide range of temperatures varying from room temperature (293 K) to liquid nitrogen temperature (77 K). The results demonstrated that the free volume decrease due to annealing and/or cryogenic temperature can reduce the propensity for the formation of multiple shear bands and hence deteriorate plastic deformation ability. We clearly observed a sharp ductile-to-brittle transition (DBT), across which microscopic fracture feature transfers from micro-scale vein patterns to nano-scale periodic corrugations. Macroscopically, the corresponding fracture mode changes from ductile shear fracture to brittle tensile fracture. The shear transformation zone volume, taking into account free volume, temperature and strain rate, is proposed to quantitatively characterize the DBT behavior in fracture of metallic glasses.

Study on the Mechanism of Detonation to Quasi-detonation Transition

In this paper, the mechanism of detonation to quasi-detonation transition was discussed, a new physical model to simulate quasi-detonation was proposed, and one-dimensional theoretical and numerical simulation was conducted. This study firstly demonstrates that the quasi-detonation is of thermal choking. If the conditions of thermal choking are created by some disturbances, the supersonic flow is then unable to accept additional thermal energy, and the CJ detonation becomes the unstable quasi-detonation precipitately. The kinetic energy loss caused by this transition process is firstly considered in this new physical model. The numerical results are in good agreement with previous experimental observations qualitatively, which demonstrates that the quasi-detonation model is physically correct and the study are fundamentally important for detonation and supersonic combustion research.