The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
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2010
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| Resumo |
In this work, we have adopted reflectance difference spectroscopy to study the evolution of InAs layer grown at different temperatures in GaAs matrix. Associated with the two- to three-dimensional growth transition of InAs layer, the transition energies and the in-plane optical anisotropy of InAs wetting layer exhibit abrupt changes. This provides a new way to decide the critical thickness h(c) for the growth transition. The obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. The origin of the difference is clarified and the variations in hc with temperature are further discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3494043] Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05T04:16:25Z No. of bitstreams: 1 The two- to three-dimensional growth transition of InAs-GaAs epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05T04:20:15Z (GMT) No. of bitstreams: 1 The two- to three-dimensional growth transition of InAs-GaAs epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (MD5) Made available in DSpace on 2010-12-05T04:20:15Z (GMT). No. of bitstreams: 1 The two- to three-dimensional growth transition of InAs-GaAs epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (MD5) Previous issue date: 2010 The work was supported by the National Natural Science Foundation of China (Grant Nos. 60625402 and 60990313) and the 973 program (Grant Nos. 2006CB604908 and 2006CB921607). 其它 The work was supported by the National Natural Science Foundation of China (Grant Nos. 60625402 and 60990313) and the 973 program (Grant Nos. 2006CB604908 and 2006CB921607). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou GY (Zhou G. Y.), Chen YH (Chen Y. H.), Tang CG (Tang C. G.), Liang LY (Liang L. Y.), Jin P (Jin P.), Wang ZG (Wang Z. G.).The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy.JOURNAL OF APPLIED PHYSICS,2010,108(8):Art. No. 083513 |
| Palavras-Chave | #半导体材料 #QUANTUM-DOT SYSTEM #ISLAND FORMATION #IN-SITU #EVOLUTION #GAAS #PHOTOLUMINESCENCE |
| Tipo |
期刊论文 |
