Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface

We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga...H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved.

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

沈阳市城市扩展分析与模拟研究

城市扩展及其导致的土地利用/土地覆被变化作为全球环境变化的重要驱动因素，日益引起社会各界的普遍关注。新中国成立以来，沈阳市经历了快速的城市化过程，特别是进入21世纪以来，伴随着人口增长和经济发展，中心城区持续向外扩张，导致基本农田大量流失，区域景观和生态环境质量日益下降，给沈阳市的城市增长管理和可持续发展带来严峻挑战。 利用遥感(RS)、地理信息系统(GIS)和空间Logistic回归模型对1988-2004年间沈阳市的城市扩展与土地利用变化特征及其驱动力进行深入分析，并在此基础上利用基于细胞自动机(CA)的城市扩展模型－SLEUTH对历史时期(1988-2004年)的城市扩展格局进行模拟与重建，对未来(2005-2030年)不同发展条件下的城市扩展进行模拟与环境影响评估，以期为城市增长管理与区域可持续发展提供决策支持。本论文取得如下研究成果： (1) 1988-2004年间，沈阳市辖区城市面积持续增加，城市扩展强度逐渐增强；2000-2004年城市扩展规模和强度都达到最大；沈阳市城市化进程正在显著加速。城市扩展具有明显的空间分异特征：整个研究时段内，市区西南方向是城市扩展的主方向，中心城区周边(8~10km)及各级经济开发区是扩展的热点区域。 (2) 1988-2004年间，沈阳市辖区土地利用变化最主要的特征是耕地向城乡建设用地的大面积转换。持续的城市扩展导致区域景观日益破碎化和复杂化。城市和其它建设用地的景观影响日益增强，耕地的优势地位减弱，且破碎化程度增加，斑块形状日趋复杂。城市化空间梯度上的土地利用格局变化分析表明，随着城市化水平的提高，景观组成和空间配置发生了明显变化。处在城市化前沿区域的城郊地区，景观格局表现出景观多样性增加、破碎化程度加深和形状日趋复杂等特点。 (3) 1988-2004年间，沈阳市辖区城市扩展主要受到社会经济发展的推动作用和政策因素的激励与导向作用。空间Logistic回归分析显示，开发区建设与行政建制变化、道路与城镇分布、浑河和城市规划是城市空间扩展的主要影响因素。 (4) ROC曲线统计、Kappa统计与多分辨率误差估算以及景观指数从城市扩展总体预测能力、增长数量、空间位置和空间格局上给予SLEUTH模型一个全面、客观的评估。总体上来说，SLEUTH模型具有可信精度，较好地表达了沈阳市1988-2004年间城市扩展的总体趋势，对城市扩展面积的拟合精度很高。但是，与其它城市扩展模型相似，在像元尺度上对城市扩展空间位置的预测和对城市空间格局的表达还有待于提高；随着分辨率的降低，模型对城市发展中空间邻域关系的表达效果趋于提高。SLEUTH模型对城市扩展的总体模拟精度要高于空间Logistic回归模型，但是对城市扩展位置的模拟准确性低于后者。 (5) 通过分析发现，影响SLEUTH模拟准确性的主要因素包括模型结构、地方城市发展特征、模型应用的时空尺度和模型输入数据的获取与误差传递等。通过修改模型组分设置、开展模型敏感性与不确定性分析以及实行城市扩展一体化模拟可以提高SLEUTH模型的模拟效力，而具体实现方法需要深入研究。基于模型评估结果和效力提高的对策，对城市扩展演变的时空格局进行了较为准确的重建，为其相关研究提供了可靠的历史数据资料。 (6) 遵循沈阳市目前和未来的区域开发政策、最新修编的城市总体规划，以及社会对区域生态环境保护的要求，设计了五个城市发展预案，即目前趋势发展预案(CT)、区域开发政策与城市规划预案(PP)、生态可持续发展预案(ES)、紧凑式发展格局预案(CD)和特定增量发展预案(GA)。对不同预案条件下未来(2004-2030年)城市扩展面积和空间格局、城市扩展热点区域、城市景观格局变化及其景观生态效应，以及对其它类型土地资源的消耗四个方面进行了分析和比较，为沈阳市城市规划、生态建设以及可持续增长管理提供了许多有价值的决策信息。

玫瑰花芽分化期矿质元素和内源激素的变化规律

本文以沈阳市于洪区玫瑰种植示范区内多季花冷香玫瑰和单季花平阴玫瑰为研究对象，通过野外采样并测定了两者在花芽分化期矿质元素（P、K、Ca、Mg、Fe、Zn、B、Mn、Cu）和内源激素（IAA、GA、ZR、ABA）的含量，并对其含量及比值变化进行分析，初步确定了玫瑰花芽分化与元素、激素之间的相互关系。研究结果将为玫瑰花期的化学调控、提高产花量和正确制定栽培技术措施提供理论依据，也为玫瑰进一步开发利用打下基础。主要结论：1．在冷香玫瑰和平阴玫瑰的整个花芽分化期，P、K、Cu、Zn大体上均呈下降趋势，表明它们可能参与玫瑰成花；ca、Mg在冷香玫瑰和平阴玫瑰的花蕾形成期含量都下降，可能意味着ca、Mg参与两者的花蕾形成；Fe与玫瑰花芽分化关系不大；高含量的B和Mn有利于两者花蕾形成。2．在冷香玫瑰和平阴玫瑰花蕾形成期，IAA和GA出现低水平，ZR和ABA出现高水平，激素比值（ABA/GA，ABA／IAA，ZR/GA，ZR/IAA）出现高水平，表明ABA和ZR促进两者开花；而IAA和GA抑制两者开花；高比例的（ABA/GA，ABA/IAA，ZR/GA，ZR/IAA）有利于两者开花。

簇毛麦（ Dasypyrum villosum）矮秆突变体的研究

株高是农作物的重要农艺性状之一，适度矮化有利于农作物的耐肥、抗倒、高产等。20世纪50年代，以日本的赤小麦为矮源的半矮秆小麦的培育和推广，使得世界粮食产量显著增长，被誉为“绿色革命”。迄今为止，已报到的麦类矮秆、半矮秆基因已达70多个，但由于某些矮源极度矮化或者矮化的同时伴随不利的农艺性状，使得真正运用于育种实践的矮源较少。因此，发掘和鉴定新的控制麦类作物株高的基因，开展株高基因定位、克隆及作用机理等方面的研究，对实现麦类作物株高的定向改良，具有重要的理论意义和应用价值。簇毛麦(Dasypyrum villosum，2n＝14，VV)是禾本科簇毛麦属一年生二倍体异花授粉植物，为栽培小麦的近缘属。本课题组在不同来源的簇毛麦杂交后代中发现了一株自然突变产生的矮秆突变体。观察分析了该突变体的生物学特性，对矮秆性状进行了遗传分析，对茎节细胞长度、花粉的活力进行了细胞学观察，考察了该突变体内源赤霉素含量及不同浓度外施赤霉素对突变体的作用，分析了赤霉素生物合成途径中的内根贝壳杉烯氧化酶（KO）和赤霉素20氧化酶(GA20ox)的转录水平，对赤霉素20氧化酶和赤霉素3-β羟化酶(GA3ox)进行了克隆和序列分析，并对GA20ox进行了原核表达和表达的组织特异性研究。主要研究结果如下：1. 该突变体与对照植株在苗期无差异，在拔节后期才表现出植株矮小，相对对照植株，节间伸长明显受到抑制，叶鞘长度基本不变。在成熟期，对照植株的平均株高为110cm，而突变株的平均株高为32cm，仅为对照植株的1/3 左右。除了株高变矮以外，在成熟后期，突变株还表现一定程度的早衰和雄性不育。I2-KI染色法观察花粉活力结果表明，对照植株花粉90%以上都是有活力的，而突变植株的花粉仅20%左右有活力。2. 突变株与对照植株的杂交F1代均表现正常株高，表明该突变性状为隐性突变。F1代植株相互授粉得到的168株F2代植株中，株高出现分离，正常株高（株高高于80cm）与矮秆植株（株高矮于40cm）的株数比为130：38，经卡方检验，其分离比符合3：1的分离比，因此推测该突变体属于单基因的隐性突变。3. 用ELISA方法检测突变株和对照植株的幼嫩种子中内源性生物活性赤霉素（GA1＋3）含量，结果表明突变株的赤霉素含量为36 ng/ml，而对照植株的赤霉素含量为900 ng/ml。对突变株外施赤霉素，发现矮秆突变株的株高和花粉育性均可得到恢复。这些结果表明该突变株为赤霉素缺陷型突变。4. 用荧光定量PCR方法比较突变株与对照植株中内根贝壳杉烯氧化酶和赤霉素20氧化酶的转录水平，结果表明突变株的KO转录水平比对照植株分别提高了6倍（苗期）和16倍（成熟期），突变株的GA20ox转录水平与对照植株在苗期无明显差异，在成熟期突变株较对照植株则提高了10倍左右。这些结果表明该矮秆突变体与赤霉素的生物合成途径密切相关，而且极有可能在赤霉素的生物合成途径早期就发生了改变。5. 以簇毛麦总基因组为模板，同源克隆了GenBank登录号为EU142950，RT-PCR分离克隆了簇毛麦的GA3ox基因cDNA全长序列，分析结果表明该cDNA全长1206bp，含完整编码区1104bp，推测该序列编码蛋白含368个氨基酸残基，分子量为40.063KD，等电点为6.27。预测的氨基酸序列含有双加氧酶的活性结构，在酶活性中心2个Fe离子结合的氨基酸残基非常保守。该序列与小麦、大麦和水稻的GA3ox基因一致性分别为98%、96%、86%。基因组序列与cDNA序列在外显子部分一致，在478-715bp和879-1019bp处分别含238bp和140bp的内含子。6. 通过RT-PCR技术克隆了簇毛麦的GA20ox基因全长，命名为DvGA20ox，GenBank登录号为EU142949。该基因全长1080个碱基，编码359个氨基酸，具有典型的植物GA20ox基因结构。该基因编码的蛋白质与小麦、大麦、黑麦草等GA20ox蛋白的同源性分别为98%，97% 和91%。该序列重组到原核表达载体pET-32a(+)上，将获得的重组子pET-32a(+)-DvGA20ox转化大肠杆菌BL21pLysS后用IPTG进行诱导表达。SDS-PAGE分析表明，DvGA20ox基因在大肠杆菌中获得了高效表达，融合蛋白分子量为55kDa。定量PCR分析表明，该基因在簇毛麦不同器官中的表达差异明显：叶片中表达水平最高，根部表达水平次之，茎部和穗中表达较弱。在外施赤霉素后，该基因的表达水平在两小时以后急剧下降，表明该基因的表达受自身的反馈调节。本研究结果认为，(1)该簇毛麦矮秆突变体为单基因的隐性突变；(2)该矮秆突变体为赤霉素敏感突变，内源赤霉素含量检测表明突变体的内源性赤霉素含量仅为对照植株的1/30；(3)荧光定量PCR结果表明突变株的赤霉素生物合成途径的关键酶基因表达水平比对照植株高，而且突变植株的赤霉素生物合成改变很可能发生在赤霉素生物合成途径的早期；(4)GA20ox有表达的组织特异性，且受到自身产物的反馈调节。 Plant height is an impotrant agronomic trait of triticeae crops.Semi-dwarf cropcultivars, including those of wheat, maize and rice, have significantly increased grainproduction that has been known as “green revolution”. The new dwarf varieties couldraise the harvest Index at the expense of straw biomass, and, at the sametime, improvelodging resistance and responsiveness to nitrogen fertilizer. Moreover, dwarf traits ofplant are crucial for elucidating mechanisms for plant growth and development aswell. In many plant species, various dwarf mutants have been isolated and theirmodles of inheritance and physiology also have been widely investigated.The causesfor their dwarf phenotypes were found to be associated with plant hormones,especially, gibberellins GAs.Dasypyrum villosum Candargy (syn.Haynaldia villosa) is a cross-pollinating,diploid (2n = 2x = 14) annual species that belongs to the tribe Triticeae. It is native toSouthern Europe and West Asia, especially the Caucasuses, and grows underconditions unfavorable to most cultivated crops. The genome of D. villosum,designated V by Sears, is considered an important donor of genes to wheat for improving powdery mildew resistance, take-all, eyespot, and plant and seed storageprotein content. A spontaneous dwarf mutant was found in D. villosum populations.The biological character and modles of inheritance of this dwarf mutant are studied.The cell length of stem cell is observed. The influence of extraneous gibberellin tothe dwarf mutant is also examined; the transcript level of key enzyme of gibberellinbiosynthesis pathway in mutant and control plants is compared. GA3ox and GA20oxare cloned and its expression pattern is researched.1. The dwarf mutant showed no difference with control plants at seedlingstage.At mature stage, the average height of control plants were 110cm and the dwarfplants were 33cm. The height of the mutant plant was only one third of the normalplants due to the shortened internodes. Cytology observation showed that theelongation of stem epidermal and the parenchyma cells were reduced. The dwarfmutant also shows partly male sterile. Pollen viability test indicates that more than80% of the pollen of the mutant is not viable.2. The inheritance modle of this dwarf mutant is studied. All The F1 plantsshowed normal phenotype indicating that the dwarfism is controlled by recessivealleles. Among the 168 F2 plants, there are 130 normal plants and 30 dwarf plants, thesegregation proportion accord with Mendel’s 3:1 segregation. We therefore proposethat this dwarf phenotype is controlled by a single recessive gene.3. Quantitative analyses of endogenous GA1+3 in the young seeds indicated thatthe content of GA1+3 was 36ng/ml in mutant plants and 900ng/ml in normal plants.The endogenous bioactive GA1+3 in mutant plants are only about 1/30 of that innormal plants. In addition, exogenously supplied GA3 could considerably restore themutant plant to normal phenotype. These results showed that this mutant wasdefective in the GA biosynthesis.4. More than ten enzymes are involved in GA biosynthesis. KO catalyzes thefirst cytochrome P450-mediated step in the gibberellin biosynthetic pathway and themutant of KO lead to a gibberellin-responsive dwarf mutant. GA20ox catalyze therate-limited steps so that their transcript level will influence the endogenous GAbiosynthesis and modifies plant architecture. The relative expression levels of genesencoding KO and GA20ox were quantified by real time PCR to assess whether thechanges in GA content correlated with the expression of GA metabolism genes andwhere the mutant occurred during the GA biosynthesis pathway. In mutant plants,the transcript levels of KO increased about 6-fold and 16-fold at the seedling stage and elongating stage respectively comparing with the normal plants. For theseedlings, there was no notable difference in the expression of GA20ox betweenmutant and normal plants. At the elongating stage, GA20ox transcript increased 10times in mutant plants, suggesting that the GA biosynthesis pathway in mutant plantshad changed from the early steps rather than the late steps.5. A full length cDNA of D. villosum gibberellin 3β-hydroxylase homology(designated as DvGA3ox) was isolated and consisted of 1206bp containing an openreading frame of 1104bp encoding 368 predicted amino acid residues. Identityanalysis showed that the gibberellin 3β-hydroxylase nucleotide sequence shared 98%,96% and 86% homology with that of wheat, barley and rice. The predicted peptidecontained the active-site Fe of known gibberellin 3β-hydroxylase and the regionhomologous to wheat, barley and Arabidopsis. The genomic clone of gibberellin3β-hydroxylase has two introns.6. The full-length cDNA of D. villosum gibberellin 20 oxidase (designated asDvGA20ox) was isolated and consisted of 1080-bp and encoded 359 amino acidresidues with a calculated mol wt of 42.46 KD. Comparative and bio-informaticsanalyses revealed that DvGA20ox had close similarity with GA20ox from otherspecies and contained a conserved LPWKET and NYYPXCQKP regions. Tissueexpression pattern analysis revealed DvGA20ox expressed in all the tissues that wereexamined and the highest expression of DvGA20ox in expanding leaves followed byroots. Heterologous expression of this cDNA clone in Escherichia coli gave a fusionprotein that about 55KD. Transcript levels of DvGA20ox dramatically reduced twohours after application of biologically active GA3, suggesting that the biosynthesis ofthis enzymes might be under feedback control.

真菌单宁酶发酵五倍子和有机溶剂中酶法合成没食子酸丙酯的研究

本文报告了丝状真菌单宁酶发酵五倍子及有机溶剂中酶法合成没食子酸丙酯的研究。利用单宁和/或五倍子诱导丝状真菌产生单宁 酶的原理，借助二级发酵程序，对从天然源得到的75株菌进行了生物转化实验研究。选择出既能水解单宁或五倍子成没食子酸，又 能把没食子酸和丙醇合成没食子酸丙酯，而且生物催化活性都较高的1株菌，这株菌经初步鉴定为黑曲霉(Aspergillus niger No.17)。随后对它开展了产酶条件和参数优化实验，得出了最佳培养条件。立足于参数优化实验方案的基础上，经由液体培养发酵 制备单宁酶制剂，并把该酶通过化学手段共价结合到一种新型载体—聚乙烯醇和戊二醛反应生成的缩醛上，制备得到固定化单宁酶 。这种固定化生物催化剂在两种有机介质体系中都具有逆向催化合成没食子酸丙酯的能力。最后建立起来一条有效可行的微生物酶 法制备没食子酸的技术途径，没食子酸产率达到70%。对这种物质进行元素 分析：含C,49.45%;含H,3.63%。它的熔点为237℃～243 ℃，三种溶剂系统的TLC均只给出一个斑点。这些数据都与标准品一致。有机溶剂中酶法合成没食子酸丙酯的技术途径已经建立。 水溶性单宁酶在潜溶剂体系中也能催化上述酯化反应，反应混合物中的PG浓度为16.4mmol/L，制备薄层被用于分离反应混合物所含 的PG，这种产物被红外、质谱及三种溶剂系统的TLC等方法鉴定，确证为目标产物。在这一学位论文的实验研究过程中，还包括一 些生化分析方法的建立和应用，这些方法用于鉴定底物和产物及测定它们的浓度，其内容主要包括TLC定性/半定量分析、元素分析 、质谱、红外等手段的综合运用。本工作为开发我国特有的天然产物资源—五倍子的生物化工加工技术及非水相生物催化技术的开 发，提供了有用的基础数据资料，具有应用基础研究工作的重要性。In this thesis, the studies on the fermentation of Chinese gallotannin by filamentous fungi with tannase activity and enzymatic synthesis of propyl gallate(PG) in organic solvents were described through these biocatalysts. Based on the principles of induction enzyme, the tannase produced from filamentous fungi by adding tannic acid(TA) and/or Chinese gallotannin into media was investigated, and the screening experiments of bioconversion were done with 75 strains by means of a two-stage fermentation procedure. These strains were isolated with the enrichment culture technique from natural sources. Hence we selected one strain (Aspergillus niger No.17) that can not only catalyze the hydrolyses of TA and/or Chinese gallotannin into gallic acid(GA) in the liquid cultures, but also be used to synthesize PG from propanol and GA in the non-aqueous media. At the same time both of its biocatalytical activities were higher. This strain was calssified to be Aspergillus niger by the primary identification. Then optimum conditions for production of the tannase and its parameters were examined. In this way, one set of optimum culture conditions was selected. Making use of the optimum proposal, the tanase was prepared through a liquid fermentation procedure. The enzyme was convalently coupled to a new type of carrier which was made chemically from polyvinyl alcohol(PVA)and glutaraldehyde. The immobilized enzymes were able to synthesize PG reversely in two organic media. Finally, an effective enzymatic technique for production of GA was developed. The yield of GA products was up to 70%。Element analysis for this substance: calce: C, 49.42%; H, 3.56%; found: C, 49.45%, H, 3.63%. Its melting point was 237℃～ 243℃ and TLCs on three solvent systems gave only one spot respectively. These data were identical with theauthentic GA. The enzymatic synthesis of PG in organic solvents was extablished with reverse route of tannase catalytical hydrolysis. Aqueous enzyme perparation also catalyzed above esterification in a buffer system. The PG concentration in the reaction mixture was 16.4mmol/L. The reparative-scale TLC was used to isolate PG from the reaction mixture. This product separated was identified by IR, MS and TLC on three solvent systems. In this study of thesis, some biochemical analytical mehtods were developed and used to identify substrates and products, and to determinate their concentration. These methods, including TLC qualitative/half quantitative analysis, element analysis, MS, IR and so on, were useful, available and performable. This work provided basic data and information for developing the biochemical engineering and bio-processing of Chinese gallotannin-a special natural resource in China and the non-aqueous phase biocatalysis. Thus, this study possesses importance in the applied and basic research work.