Crystallographic and magnetic properties of R3Fe29-xVxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and magnetic properties of nitride R3Fe29-xVxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. Nitrogenation leads to a relative volume expansion of about 6%. The lattice constants and unit cell volume decrease with increasing rare-earth atomic number from Nd to Dy, reflecting the lanthanide contraction. On average, the Curie temperature increases due to the nitrogenation to about 200 K compared with its parent compound. Generally speaking, nitrogenation also results in a remarkable improvement of the saturation magnetization and anisotropy fields at 4.2 K and room temperature for R3Fe29-xVxN4 compared with their parent compounds. The transition temperature indicates the spin reorientations of R3Fe29-xVxN4 for R = Nd and Sm are at around 375 and 370 K which are higher than that of R3Fe29-xVx, for R = Nd and Sm 145 and 140 K, respectively. The magnetohistory effects of R3Fe29-xVxN4 (R = Ce, Nd, and Sm) are observed in low fields of 0.04 T. After nitrogenation the easy magnetization direction of Sm3Fe26.7V2.3 is changed from an easy-cone structure to the b-axis. As a preliminary result, a maximum remanence B-r of 0.94 T, an intrinsic coercivity mu(0)H(C) of 0.75 T, and a maximum energy product (B H)(max) of 108.5 kJ m(-3) for the nitride magnet Sm3Fe26.7V2.3N4 are achieved by ball-milling at 293 K.

基于优先级表的实时调度算法及其实现

讨论了综合考虑任务的截止期和价值两个特征参数的优先级表设计方法,提出了EDV(earliestdeadlinevalue)与VED(valueearliestdeadline)两种不同的基于优先级表的实时任务调度算法,并且利用多重链表给出了这两种算法的实现,包括任务接收策略与任务完成/夭折策略的算法实现.这种优先级表设计方法及其基于多重链表的实现方法也适用于对任务的其他两种甚至3种不同特征参数之间的综合.基于累积实现价值率、加权截止期保证率与差分截止期保证率3个方面,分析了VED算法与EDV算法的性能,实验结果表明,在所有负载条件下VED算法与EDV算法相对于EDF(earliestdeadlinefirst)算法与HVF(highestvaluefirst)算法都有很大的性能改进.

Study on methane hydration process in a semi-continuous stirred tank reactor

The methane hydration process is investigated in a semi-continuous stirred tank reactor. Liquid temperatures and reaction rates without stirrer are compared with those occurring with stirrer, while at the same time better stirring conditions of the methane hydration process are given by the experiments. Some basic data of fluid mechanics, for example, stirring Reynolds number, Froucle number and stirrer power, are calculated during the methane hydration process, which can be applied to evaluate stirrer capacity and provide some basic data for a scaled up reactor. Based on experiment and calculations in this work, some conclusions are drawn. First, the stirrer has great influence on the methane hydration process. Batch stirring is helpful to improve the mass transfer and heat transfer performances of the methane hydration process. Second, induction time can be shortened effectively by use of the stirrer. Third, in this paper, the appropriate stirring velocity and stirring time were 320 rpm and 30 min, respectively, at 5.0 MPa, for which the storage capacity and reaction time were 159.1 V/V and 370 min, respectively. Under the condition of the on-flow state, the initial stirring Reynolds number of the fluid and the stirring power were 12,150 and 0.54 W, respectively. Fourth, some suggestions, for example, the use of another type of stirrer or some baffles, are proposed to accelerate the methane hydration process. Comparing with literature data, higher storage capacity and hydration rate are achieved in this work. Moreover, some fluid mechanics parameters are calculated, which can provide some references to engineering application.

无压灌溉土壤湿润体特征值变化规律与经验解

无压灌溉土壤湿润体形状为球冠,径向和垂向最大湿润距离相等且与时间存在显著的幂函数关系,随着时间的延长,径向和垂向最大湿润距离趋于一定值。湿润体大小与供水压力之间呈抛物线关系,在零压力附近湿润体体积最大。湿润体半径与累计入渗量呈幂函数关系,拟合方程中的系数和指数为一定值,与入渗时间和供水压力无关,在试验条件下,分别为18.467和0.5037。综合以上结果,提出了预测无压灌溉土壤湿润体特征值的经验解模型。

铜的多元复合物组成、结构和电学性质的研究

本论文包括三个部分的内容，第一部分研究了Y-Ba-Cu-O材料中，钙、钾、氟离子的掺入对材料结构和电、磁学性质的影响。1、在Y_(1-x)Ca_xBa_2Cu_3O_(7-y)系列中，当x ≤ 0.15时，钙离子进入了YBa_2Cu_3O_(7-y)晶格中钇离子的位置，使晶胞参数略为增大，但没有引起正交 → 四方相变。钙离子渗入导致123相中Cu~(3+)含量上升，同时材料的监界超导转变温度下降。因此，Cu~(3+)含旱管高可能是对超导电性不利的。由于钇离子位置紧邻着Cu(2)-O平面而与Cu(1)-O链相隔较远。因此，钇离子被钙离子替代时主要影响了Cu(2)-O平面的性质。少量钙离子的渗入即明显影响材料的超导电性，这说明Cu(2)-O平面的性质与超导电性密切相关，并可能起着关键的作用。2、在Y(Ba_(1-x)Ca_x)_2Cu_3O_y系的研究中，当x = 1，YCa_2Cu_3O_y是一个单一的化合物，文献未见报道，本文研究了它的结构，电学性质与热学性质，确定它的结构属正交晶系，a = 5.286 A、b = 7.636 A、c = 9.286 A。热分析表明YCa_2Cu_3O_y在1080 ℃分解，分解前于380 ℃ 和608 ℃出殃失氧现象。这个化合物是黑色n型半导体。室温电阻率1.2 * 10~5Ω·cm。与热分析中的失氧温度相对应，lnρ-1/T曲线上在370 ℃、620 ℃ 出现两个转折点。3、在Y-Ba-Cu-O材料中渗入钾离子能细化材料晶粒，降低超导转变宽度，提高零电阻温度，但由于KOH、K_2CO_3等强吸湿性杂质的存在也降低了材料的稳定性。4、在Y-Ba-Cu-O材料中间时掺入钾和氟离子时，材料的超导电性的变化与仅掺钾时相似。这种变化可能主要是钾离子的影响造成的。第二部分中，我们研究了Ca-Sr-Ca-O系的相图和新化合物Sr_3Cu_5O_(8+x)、CaSrCu_3O_(5+x)的结构和电学性质。在第三部分中，广泛研究了组成为Bi_tSr_vCa_wCu_zO_y超导材料的制备，结构和超导电性。铋系超导材料的形成貌与YBa_2Cu_3O_y材料有较大差异，前者是片状层叠的晶粒堆积而成，后者是球状小颗粒堆积而成的。我们合成的材料最高起始转变温度124K，最高零电阻温度112K，与国际上已达到的最高Tc值一致。Jc值达到131A/cm~2。

基于薄膜SOI材料的GaN外延生长应力释放机制

本文研究了SOI衬底上采用MOCVD方法生长GaN材料的应力释放机制.采用SIMOX工艺制备的具有薄膜顶层硅的SOI材料作为外延生长的衬底材料,采用MOSS在位检测系统以及拉曼测试作为GaN内部应力的表征手段.结果表明,SOI材料对硅基GaN异质外延中的晶格失配应力和热应力的释放都有显著作用.薄膜SOI材料通过顶层硅与外延层的界面滑移,将一部分晶格失配应力通过界面的滑移释放,并且通过柔性薄膜顶层硅自身的应力吸收作用,将一部分热失配应力转移到衬底,从而有效地降低了GaN外延层的张应力.

SOI基可变光学衰减器的回波损耗研究

采用倾斜3.4°抛光SOI波导端面和在波导端面镀TiO2减反膜的方法,使SOI基动态可调光学衰减器的插入损耗减小了1.6 dB,而且回波损耗由8 dB提高至57 dB,解决了SOI波导器件回波严重这一实用化过程中的关键问题.利用上述方法研制出了完整封装的SOI基可变光学衰减器样品.

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

ZnS1-xTex混晶的压力光谱

研究了ZnS1-xTex(0.02≤x≤0.3)混晶的静压光致发光谱。每块样品都观察到一个峰值比相应混晶带隙低很多的发光峰，来源于束缚在Ten(n≥2）等电子陷陆上的激子复合发光，且随压力（0．7GPa）而蓝移、发光峰的压力系数比相应混晶带边的都要小，随着Te组分的增加而减小，与混晶带隙压力系数的差别也越来越大。由于压力下与发光峰对应的吸引能量逐渐接近并超过激发光的能量，与发光峰有关的吸收效率降低，发光峰积分强度随着压力增加而减小。据此估算了Ten等电子中心的Stokes位移。发现Stokes位移随着Te组分的增加而减小。

纳米技术与能带工程对Si基高效发光的促进

自1991年Canham L. T发现多孔Si的强发光特性之后，Si基发光的系列性探索已走过了10年的路程。人们从中认请了一些重要的科学问题，发展和掌握了许多新的技术，也取得了许多有价值的重要进展。可以说过去的10年是处於四方探索的百花齐放阶段。现在夫论从应用目标的需求和开拓研究的思路与途径，都更加明确、集中，一个有实用价值的Si基发光器件的研究高潮即将来临。本文着重评述介绍了四个方面的研究进展，即局域态nc-Si的发光，基於能带工程的Si基发光，纳米结构Si化物的发光和Ge/Si量子点的发光研究，指出了各自存在的问题，提出了若干新的研究思路。本文还把Si基发光的研究与微电子发展需求紧密结合，由此提出了下一阶段开展Si基发光研究应予遵循的几项原则。

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.