Two-photon asymmetric color-locking second-order stochastic correlation of attosecond polarization beats

Based on the phase-conjugation polarization interference between two two-photon processes, we theoretically investigated the attosecond scale asymmetry sum-frequency polarization beat in four-level system (FASPB). The field correlation has weak influence on the FASPB signal when the laser has narrow bandwidth. Conversely, when the laser has broadband linewidth, the FASPB signal shows resonance-nonresonance cross correlation. The two-photon signal exhibits hybrid radiation-matter detuning terahertz; damping oscillation, i.e., when the laser frequency is off resonance from the two-photon transition, the signal exhibits damping oscillation and the profile of the two-photon self-correlation signal also exhibits zero time-delay asymmetry of the maxima. We have also investigated the asymmetry of attosecond polarization beat caused by the shift of the two-photon self-correlation zero time-delay phenomenon, in which the maxima of the two two-photon signals are shifted from zero time-delay point to opposite directions. As an attosecond ultrafast modulation process, FASPB can be intrinsically extended to any level-summation systems of two dipolar forbidden excited states.

Spectrum shape compression and pedestal elimination employing a Sagnac loop

We report on the experimental demonstration of a spectrum shaping filter, which is formed by inserting a fiber polarization controller (PC) in to a Sagnac loop. Pedestal free and narrow spectrum with line width at 1.4-1.7 nm is obtained, which is advantageous for further power amplification and effective frequency doubling. (C) 2008 Elsevier B.V. All rights reserved.

稀土催化剂合成窄分子量分布聚异戊二烯的研究

本论文利用传统的稀土催化剂组成，探讨了稀土催化剂的配制方式，配制出稳定的均相催化剂；深入探讨了影响聚异戊二烯分子结构的因素，合成了高顺式、高分子量、窄分子量分布且具有与天然橡胶相似的拉伸结晶特点的聚合物；讨论了催化剂活性中心的形成机理；均相催化剂用于丁二烯-异戊二烯共聚合可制备窄分子量分布的无规共聚物。 1. NdCl3•3iPrOH/MMAO催化体系：可在较低的MMAO (Al/Nd < 40)用量下，高收率地合成高的顺式-1,4含量(> 96%)、非常高的分子量(Mn > 100×104)、相当窄的分子量分布(Mw/Mn < 2.0)的聚异戊二烯。与烷基铝助催化剂如Al(i-Bu)3和Al(i-Bu)2H相比，在顺-1,4含量相同的情况下，MMAO体系所得聚合物的分子量最高，分子量分布最窄。催化剂形成配位阳离子性质的活性中心。 2. Nd(vers)3/Al(i-Bu)2H/Al(i-Bu)2Cl催化体系：可在适当的陈化条件下配制出稳定的均相催化剂，该均相催化剂可在较低的Al/Nd用量(Al/Nd = 10)和催化剂用量([Nd] = 0.20 mM)下，高收率(> 80%)地合成高顺式-1,4含量(> 96%)、高分子量(Mn > 50×104)、窄分子量分布(Mw/Mn < 3.0)的聚合物。均相催化剂的活性中心为配位阳离子性质的单活性中心。 3. Nd(vers)3/MMAO/Al(i-Bu)2H/Al(i-Bu)2Cl催化体系：在相当低的MMAO用量(Al/Nd = 10，总铝量Al/Nd = 20)下，仍具有高的催化活性，所得聚合物的分子量较高(Mn 52.4×104)，分子量分布较窄(Mw/Mn < 3.0)，顺-1,4结构含量可达96%。通过调节Al(i-Bu)2H和MMAO用量可以控制聚合物的分子量及分子量分布。 4. Nd(vers)3/Al(i-Bu)3/Al(i-Bu)2Cl催化体系：用Al(i-Bu)3代替Al(i-Bu)2H作助催化剂，可在各种加料方式下高收率地获得高顺-1,4含量(96%)、非常高分子量(Mn > 100×104)、窄分子量分布(Mw/Mn < 3.0)的聚异戊二烯，且所得异戊橡胶在高顺-1,4含量(96%)、高分子量(Mn ≥ 90×104)、窄分子量分布(Mw/Mn ≤ 2.1)时存在拉伸结晶现象，性能接近甚至超过天然橡胶。 5. Nd(vers)3/AlR3(Al(i-Bu)2H, Al(i-Bu)3)/Al(i-Bu)2Cl催化体系在一定条件下，可获得高顺式-1,4含量(丁二烯和异戊二烯的顺-1,4含量均可达99.9%)、高分子量(Mn > 50×104)、窄分子量分布(Mw/Mn < 3.0)的丁二烯-异戊二烯共聚物。只是用Al(i-Bu)3作助催化剂时，均相和非均相催化剂均可得到高顺式、更高分子量(Mn > 100×104)、更窄分子量分布(Mw/Mn < 1.8)的共聚物。两单体的竞聚率为：对于Al(i-Bu)2H体系，rBD = 0.923，rIP = 0.612；对于Al(i-Bu)3体系，rBD = 1.02，rIP = 0.919。表明聚合物为无规共聚物。

Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

LO-PHONON-ASSISTED TUNNELING IN ASYMMETRIC DOUBLE-WELL STRUCTURES WITH THICK BARRIERS

Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer.

MODELING OF ELECTRON-TUNNELING TIMES IN ASYMMETRIC DOUBLE QUANTUM-WELLS

A scattering process modeled by an imaginary potential V(I) in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V(I) approximately -5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction subband to heavy hole subband increase from 9.74 meV/kbar for a 160 angstrom well to 10.12 meV/kbar for a 30 angstrom well. The calculation based on the Kronig-Penney model indicated that the extension of the electronic wave function to the barrier layer in the narrow wells is one of the reasons for the increase of the pressure coefficients with the decrease of well width. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar.

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

Characterization of recombination centres in n-type Hg1-xCdxTe

The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.

A voltage-controlled tunable two-color infrared photodetector using GaAs/AlAs/GaAlAs and GaAs/GaAlAs stacked multiquantum wells

A voltage-controlled tunable two-color infrared detector with photovoltaic (PV) and photoconductive (PC) dual-mode operation at 3-5 mu m and 8-14 mu m using GaAs/AlAs/AlGaAs double barrier quantum wells (DBQWs) and bound-to-continuum GaAs/AlGaAs quantum wells is demonstrated. The photoresponse peak of the photovoltaic GaAs/AlAs/GaAlAs DBQWs is at 5.3 mu m, and that of the photoconductive GaAs/GaAlAs quantum wells is at 9.0 mu m. When the two-color detector is under a zero bias, the spectral response at 5.3 mu m is close to saturate and the peak detectivity at 80 K can reach 1.0X10(11) cmHz(1/2)/W, while the spectral photoresponsivity at 9.0 mu m is absolutely zero completely. When the external voltage of the two-color detector is changed to 2.0 V, the spectral photoresponsivity at 5.3 mu m becomes zero while the spectral photoresponsivity at 9.0 mu m increases comparable to that at 5.3 mu m under zero bias, and the peak detectivity (9.0 mu m) at 80 K can reach 1.5X10(10) cmHz(1/2)/W. Strictly speaking, this is a real bias-controlled tunable two-color infrared photodetector. We have proposed a model based on the PV and PC dual-mode operation of stacked two-color QWIPs and the effects of tunneling resonance with narrow energy width of photoexcited electrons in DBQWs, which can explain qualitatively the voltage-controlled tunable behavior of the photoresponse of the two-color infrared photodetector. (C) 1996 American Institute of Physics.

RESEARCH ON ELECTRICAL-PROPERTIES OF AMPHIPHILIC LIPID-MEMBRANES BY MEANS OF INTERDIGITAL ELECTRODES

Lipids are the main component of all cell membranes and also important mimetic materials. Moreover, it was found recently that they can be used as sensitive membranes for olfactory and taste sensors. Hence the understanding of lipid resistance is important both in sensors and in life sciences. Thirteen lipids were examined by means of interdigital electrodes with narrow gaps of 20-50 mu m, made by IC technology. The membrane lateral resistance in air, resisting electrical voltage, the influence of impurities on resistance and the resistance change in acetic acid vapour are presented for the first time. It is shown that the electrical resistivity for self-assembling lipids depends on their duration of being in an electric field and the content of the conductive impurities. The interdigital electrode is a transducer as well as a powerful tool for researching biomaterials and mimicking materials. The conducting mechanism of lipids is discussed. This method is also suitable for some polymer membranes.

THERMAL POPULATION IN ASYMMETRIC DOUBLE WELLS COUPLED BY HOLE MIXING TUNNELING

The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an analysis of the high energy tails in cw photoluminescence spectra of asymmetric coupled double wells. Photocarriers in wide well are heated due to hole transfer from the narrow well through resonant tunneling as well as by photon heating. The influences of the excitation intensity and lattice temperature on the tunneling transfer and thermal population are discussed.

Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

A reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH_3OH gas laser with the frequency 2. 54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.