High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide


Autoria(s): Fang Gaozhan; Xiao Jianwei; Ma Xiaoyu; Xu Zuntu; Zhang Jinming; Tan Manqing; Liu Zongshun; Liu Suping; Feng Xiaoming
Data(s)

2002

Resumo

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

Identificador

http://ir.semi.ac.cn/handle/172111/17603

http://www.irgrid.ac.cn/handle/1471x/103439

Idioma(s)

英语

Fonte

Fang Gaozhan;Xiao Jianwei;Ma Xiaoyu;Xu Zuntu;Zhang Jinming;Tan Manqing;Liu Zongshun;Liu Suping;Feng Xiaoming.High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide,Chinese Journal of Lasers,2002,11(1):9-13

Palavras-Chave #光电子学
Tipo

期刊论文