High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
Data(s) |
2002
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Resumo |
The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Fang Gaozhan;Xiao Jianwei;Ma Xiaoyu;Xu Zuntu;Zhang Jinming;Tan Manqing;Liu Zongshun;Liu Suping;Feng Xiaoming.High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide,Chinese Journal of Lasers,2002,11(1):9-13 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |