Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

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The work was supported by Hong Kong RGC-GRF Grants (No. HKU 7049/08P) in Hong Kong and by NSFC Grant (No. 10425419) in Beijing. One of the authors, SJX, would like to thank W.D. Sheng, W. Yao, and F.C. Zhang for their discussions.

国内

The work was supported by Hong Kong RGC-GRF Grants (No. HKU 7049/08P) in Hong Kong and by NSFC Grant (No. 10425419) in Beijing. One of the authors, SJX, would like to thank W.D. Sheng, W. Yao, and F.C. Zhang for their discussions.