INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

图形衬底上硅区双离子束选择淀积Co研究

报道了利用质量分离低能双离子束淀积法在硅-氧化硅图形衬底上采用不同的工艺条件淀积钴(Co)离子，并生长硅化钴薄膜。扫描俄歇微探针(SAM)和X光电子能谱(XPS)测量结果表明，只在纯硅区探测到了硅化钴；而氧化硅区始终未见有钴的迹象。很好地实现了在图形衬底上钴离子的选择淀积和硅化钴薄膜的选择生长。

A Novel Two-Section Co-Cavity Wavelength Tunable Semiconductor Laser

于2010-11-23批量导入

Co-Si多层膜在稳态热退火中的固相界面反应

于2010-11-23批量导入

Co-Si多层膜的透射电镜研究

国家自然科学基金

Si/Co/GaAs体系中界面反应的竞争机制

于2010-11-23批量导入

Co与Si和SiO_2在快速热退火中的反应

于2010-11-23批量导入