Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T-s = 250 degrees C and with nominal Cr content x = 0.016. However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.

Implantable Microsystem for Wireless Neural Recording Applications

A prototype microsystem is presented for wireless neural recording application. An inductive link was built for transcutaneous wireless power transfer and data transmission. Total 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 - 5 MHz with a distance of 0-10 mm. The integrated amplifiers were designed with a limited bandwidth for neural signals acquisition. The gain of 60 dB was obtained by preamplifier at 7 Hz - 3 KHz. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments with 0.374 - 2 mW power comsumption and a maximum data rate of 500 Kbps at 100 MHz. All the integrated circuits modules except the power recovery circuit were tested or stimulated under a 3.3 V power supply, and fabricated in standard CMOS processing.

Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation - art. no. 60200O

A novel device of tandem multiple quantum wells (MQWs) electroabsorption modulators (EAMs) monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 mbar) selective area guowth (SAG) MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mX output light power of 4.5 mW and over 20 dB extinction ratio when coupled into a single mode Fiber. Moreover, over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using I this sinusoidal voltage driven integrated device, 10GHz repetition rate pulse with a width of 13.7 ps without any compression elements is obtained.

Microwave packaging for 10 Gb/s EML modulators - art. no. 60201O

A novel microwave packaging technique for 10Gb/s electro-absorption modulator integrated with distributed feedback laser (EML) is presented. The packaging parasitics and intrinsic parasitics are both well considered, and the packaging circuit was synthetically designed to compensate for the intrinsic parasitic of the chip. A butterfly-packaged EMI module has been successfully developed to prove that. The small-signal modulation bandwidth of the butterfly-packaged module is about 10 GHz. Optical fiber transmission experiments have shown that the module can be used for 10Gb/s optical transmission system. After transmission through 40km,. the power penalty is less than 1 dBm at a bit-error-rate of 10-12.

A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit

This paper proposes a novel, fast lock-in, phase-locked loop (PLL) frequency synthesizer. The synthesizer includes a novel mixed-signal voltage-controlled oscillator (VCO) with a direct frequency presetting circuit. The frequency presetting circuit can greatly speed up the lock-in process by accurately the presetting oscillation frequency of the VCO. We fully integrated the synthesizer in standard 0.35 mu m, 3.3 V complementary metal-oxide-semiconductors (CMOS) process. The entire chip area is only 0.4 mm(2). The measured results demonstrate that the synthesizer can speed up the lock-in process significantly and the lock-in time is less than 10 mu s over the entire oscillation frequency range. The measured phase noise of the synthesizer is -85 dBc/Hz at 10 kHz offset. The synthesizer avoids the tradeoff between the lock-in speed and the phase noise/spurs. The synthesizer monitors the chip temperature and automatically compensates for the variation in frequency with temperature.

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Two-color quantum well infrared photodetector simultaneously working at 10-14 mu m

We have demonstrated a two-color quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse with cutoff wavelengths at 11.8 and 14.5 mu m, respectively. Strong photocurrent signals are observed at temperature of 77 K. The simultaneous two-color photoresponse is achieved by utilizing a simple design by broadening the width of the quantum well and selecting an appropriate doping density. The two peaks are attributed to the intersubband transitions from the ground state to the first excited state (bound state) and to the fifth excited state (continuum state), respectively.

A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 mu m InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 mu m and a cavity length of 600 mu m are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50 degrees C are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.

Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer

We report highly efficient and stable organic light-emitting diodes (OLEDs) with MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) as hole injection layer (HIL). A green OLED with structure of ITO/20 wt% MoO3: PTCDA/NPB/Alq(3)/LiF/Al shows a long lifetime of 1012 h at the initial luminance of 2000 cd/m(2), which is 1.3 times more stable than that of the device with MoO3 as HIL. The current efficiency of 4.7 cd/A and power efficiency of 3.7 lm/W at about 100 cd/m(2) have been obtained. The charge transfer complex between PTCDA and MoO3 plays a decisive role in improving the performance of OLEDs.

Effect of pulse heating parameters on the microscale bubble dynamics at a microheater surface

We study the effects of pulse heating parameters on the micro bubble behavior of a platinum microheater (100 mu m x 20 mu m) immersed in a methanol pool. The experiment covers the heat fluxes of 10-37 MW/m(2) and pulse frequencies of 25-500 Hz. The boiling incipience is initiated at the superheat limit of methanol, corresponding to the homogeneous nucleation. Three types of micro boiling patterns are identified. The first type is named as the bubble explosion and regrowth, consisting of a violent explosive boiling and shrinking, followed by a slower bubble regrowth and subsequent shrinking, occurring at lower heat fluxes. The second type, named as the bubble breakup and attraction, consists of the violent explosive boiling, bubble breakup and emission, bubble attraction and coalescence process, occurring at higher heat fluxes than those of the first type. The third type, named as the bubble size oscillation and large bubble formation, involves the initial explosive boiling, followed by a short periodic bubble growth and shrinking. Then the bubble continues to increase its size, until a constant bubble size is reached which is larger than the microheater length. 

Ce-基催化剂上CH_4低温催化燃烧的研究

Ce-基催化剂在汽车尾气净化，工业废气处理，烃类重整，烃类选择加氢等方面均有广泛的应用。近几十年来关于如何制备高活性、高稳定性的非贵金属复合氧化物催化剂一直是催化研究的重要课题之一。Ce-基催化剂主要都是通过其它金属氧化物M掺杂到CeO_2中形成Ce_(1-x)M_xO（M为掺杂物）固溶体。本文选用CeO_2作为主要研究对象，用柠檬酸法有目的的引入化学特性、离子半径不同的另一组分，用x值表示各元素间的化学计量比，优化催化剂的组成、结构，来调节所合成固溶体氧化物的物理化学性质。分别以碱土金属Ca、稀土金属La以及过渡金属Ni和Mn为掺杂物制备出含其它不同离子的Ce-基催化剂；将具有较高活性的Ni_(0.7)Ce_(0.3)O负载在ZrO_2上，以CH_4燃烧为模型反应，考察催化剂活性和氧化还原性的关系。1．Ce-Ca-La-O体系单独Ca或La分别加入到CeO_2中后催化剂的活性比单独的CeO_2的活性要高出很多，完全转化温度要下降近100℃，而且它们的H_2-TPR实验也证实了其氧化还原能力有很大的提高。将Ca和La同时引入到CeO_2的复合氧化物Ce-La-Ca-O材料，其活性比无La的Ce-Ca-O的活性没有明显的提高，而且反而要比Ce-La-O的活性低，且其HZ一TPR实验也显示出和复合氧化物Ce-Ca-O的轮廓一样。2．Ce-Ni-Mn-O体系对NiO、MnO_x、CeO_2三种金属氧化物，在优化两种金属氧化物最佳配比（组成）后，在复合氧化物中掺杂第三种金属氧化物以考察第三种金属对其甲烷燃烧活性的影响。（l）CeO_2-MnO_x体系中，在Ce_(0.8)Mn_(0.2)O掺杂NiO后，发现当Ni的摩尔量为-10％时，活性提高幅度的很大，完全燃烧的温度下降了近50℃，可在550℃将CH_4完全氧化到CO_2。（2）CeO_2-NiO体系中，Ce_(0.3)Ni_(0.7)O可在530℃将CH_4完全氧化到CO_2。向其中掺杂Mn后，复合氧化物的活性反而下降，要在550oC才能将CH4完全氧化到C02。这可能是阴离子缺陷减少所致。（3）NIO一Mnox体系中，Nio，IMn090掺杂Ce后，催化活性有大幅度提高，特别是Nio．ICeyMno90（0．3三y生0．8）中催化剂的活性更高，可在530oC体系中，其中y＝0．5时更突出。3．Ni-Ce-O／ZrOZ体系（1）Ni1-x一Cex一O体系中，独立的CeOZ相促进了NIO的还原和表面积增加。（2）少量的CeOZ的掺杂明显改善了NIO对cH4完全氧化反应的活性。继续增加Ce的量催化活性弱有增加，然后下降。在Ce的掺杂量为30％时，即Nio7Ceo3O，催化活性最佳，此时甲烷完全转化的温度为530oC。（3）催化剂Ni07Ceo3O具有很好的稳定性，900oC下焙烧，还能在540oC将CH4完全氧化到COZ。（4）催化剂Pd／Ni07Ceo30的催化活性与Pd／A12O3的活性相当。（5）催化剂Ni07Ce03O负载在不同的载体上，发现ZrOZ作载体效果最佳，其次为5102，这可能是ZrOZ、5102对NIO、CeOZ相对惰性有关；而MgO、A1203虽表面积较大，但作为载体效果却不好，可能其易与NIO、CeOZ发生反应有关。（6）Nio7Ceo3O负载在ZrOZ上，提高了表面积同时促进了Nio7Ceo3O还原性，以负载量为50％时活性最好。结构分析发现有两个新相生成，Ni4Zro和CeZO3。（7）通过对比发现Nio7Ceo3O（50％）／ZrOZ体系高活性除了ZrOZ作为载体提高表面积外，Zr02和Ce在这里还起到助催化剂的作用。4．还探讨了Pr掺杂到CeO2，以及YSZ作为载体负载过渡金属氧化物在甲烷催化燃烧反应种的作用。