A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 mu m InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 mu m and a cavity length of 600 mu m are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50 degrees C are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T13:59:02Z No. of bitstreams: 1 A 10 Gbs Directly-Modulated 1.3 mu m InAsGaAs Quantum-Dot Laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22T14:12:18Z (GMT) No. of bitstreams: 1 A 10 Gbs Directly-Modulated 1.3 mu m InAsGaAs Quantum-Dot Laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (MD5)

Made available in DSpace on 2010-04-22T14:12:19Z (GMT). No. of bitstreams: 1 A 10 Gbs Directly-Modulated 1.3 mu m InAsGaAs Quantum-Dot Laser.pdf: 527679 bytes, checksum: ce090f463c931143e77b37f76db2b6ea (MD5) Previous issue date: 2010

National High-Technology Research and Development Program of China 2006AA03Z401; Chinese Academy of Sciences; National Natural Science Foundation of China 60876033

其它

National High-Technology Research and Development Program of China 2006AA03Z401; Chinese Academy of Sciences; National Natural Science Foundation of China 60876033