有机／无机杂化SiO_2／Si光波导薄膜的制备及表征

采用有机／无机杂化溶胶-凝胶（sol-gel）法制备了SiO_2光波导薄膜材料。采用甲基丙烯酰氧丙基三甲氧基硅烷（MAPTMS）作为反应先躯体，四丙氧基锆（ZPO）作为调节折射率的材料，正丙醇（n-propyl alcohol）为溶剂，利用旋涂方法在Si基片上成膜，采取低温长时间、高温短时间的热处理方式，制备出无龟裂薄膜。分别采用棱镜耦合仪和原子力显微镜（AFM）研究了不同溶剂量和不同ZPO量情况下，薄膜的折射率、厚度以及表面形貌变化情况。研究结果表明

紫外光直写杂化溶胶-凝胶SiO_2光波导器件

利用有机/无机杂化方法制备了光敏性溶胶-凝胶(sol-gel)SiO_2材料,在硅基片上旋涂成膜.研究了薄膜折射率和厚度随紫外曝光时间、后烘温度及时间等外界工艺条件的变化关系.利用紫外光直写技术,制作出1×2,1×4多模干涉(MMI)型分束器,并且观测到了分光效果较好的近场输出图像.

溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的n一Ⅵ族宽禁带半导体材料。采用溶胶一凝胶(sol-gel)工艺在si(100)、si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜，并用XRD、SEM、AFM等方法研究了薄膜的特性。首次以制备的ZnO纳米薄膜为缓冲层，在n型si(1()o)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜，得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品，分析了该薄膜的性能。

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.