Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf-Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 Elsevier Ltd. All rights reserved.

Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

The defect evolution and its correlation with electrical properties of GaN films grown by metalorganic chemical vapor deposition are investigated. It is found that the dislocation density decreases gradually during the growth process, and the dislocation reduction rate in the island coalescence process is especially rapid. The changes in electron mobility of GaN with the increase of growth time are mainly dependent on the dislocations acting as scattering centers. Furthermore, the variation of carrier concentration in GaN may be related with the point defects and their clusters. The quality of GaN could be improved by suitably increasing the film thickness. (C) 2009 Elsevier B.V. All rights reserved.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO2 matrix is reported. The PL spectra consist of three Gaussian bands (peaks A,B, and C), originated from the quantum confinement effect of Si NCs, the interface state effect between a Si NC and a SiO2 matrix, and the localized state transitions of amorphous Si clusters, respectively. The size and the surface chemistry of Si NCs are two major factors affecting the transition of the dominant PL origin from the quantum confinement effect to the interface state recombination. The larger the size of Si NCs and the higher the interface state density (in particular, Si = O bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with Qin's prediction in Qin and Li [Phys. Rev. B 68, 85309 (2003)]. The realistic model of Si NCs embedded in a SiO2 matrix provides a firm theoretical support to explain the transition trend.

Experimental study of mode field evolution of dual-core photonic crystal fiber

The accurate mode field profile of high negative dispersion dual-core photonic crystal fiber (DCPCF) is measured. The mode field evolution of DCPCF with wavelength is studied experimentally for the first time. The measurement result shows that no individual inner core mode or outer core mode exists, but two modes coexist simultaneously, and either one of them is dominant. The mode field evolution versus wavelength indicates that the wavelength range where the modes coupling takes place between inner core and outer core is broader than that of theoretical design.

Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer

The strain evolution of a GaN layer grown on a high- temperature AlN interlayer with varying AlN thickness by metalorganic chemical vapour deposition is investigated. In the growth process, the growth strain changes from compression to tension in the top GaN layer, and the thickness at which the compressive- to- tensile strain transition takes place is strongly influenced by the thickness of the AlN interlayer. It is confirmed from the x- ray diffraction results that the AlN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer. The strain transition process during the growth of the top GaN layer can be explained by the threading dislocation inclination in the top GaN layer. Adjusting the AlN interlayer thickness could change the density of the threading dislocations in the top GaN layer and then change the stress evolution during the top GaN layer's growth.

Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch.

Evolution of InAs nanostructures grown by droplet epitaxy

The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings. (C) 2007 American Institute of Physics.

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy

A detailed observation was made using atomic force microscopy on the two- to three-dimensional (2D-3D) growth mode transition in the molecular-beam epitaxy of InAs/GaAs(001). The evolution of the 3D InAs islands during the 2D-3D mode transition was divided into two successive phases. The first phase may be explained in terms of a critical phenomenon of the second-order phase transition.

Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN interlayer surface and the threading dislocations generated in the AlN interlayer have a significant influence on this strain evolution process. The dislocations generated in AlN interlayer may thread across the interface and play a key role in the strain evolution process of the GaN layer grown on AlN interlayer.

Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy-and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy-and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.

Strain evolution in GaN layers grown on high-temperature AlN interlayers

The strain evolution of the GaN layer grown on a high-temperature AlN interlayer with GaN template by metal organic chemical vapor deposition is investigated. It is found that the layer is initially under compressive strain and then gradually relaxes and transforms to under tensile strain with increasing film thickness. The result of the in situ stress analysis is confirmed by x-ray diffraction measurements. Transmission electron microscopy analysis shows that the inclination of edge and mixed threading dislocations rather than the reduction of dislocation density mainly accounts for such a strain evolution. (c) 2006 American Institute of Physics.

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

The wetting layer (WL) in InAs/GaAs quantum-dot systems has been studied by reflectance difference spectroscopy (RDS). Two structures related to the heavy-hole (HH) and light-hole (LH) related transitions in the WL have been observed. On the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of InAs in the WL (t(WL)) and its segregation coefficient ( R) have been determined from the HH and LH transition energies. The evolutions of tWL and R exhibit a close relation to the growth modes. Before the formation of InAs dots, t(WL) increases linearly from similar to 1 to similar to 1.6 monolayer (ML), while R increases almost linearly from similar to 0.8 to similar to 0.85. After the onset of dot formation, t(WL) is saturated at similar to 1.6 ML and R decreases slightly from 0.85 to 0.825. The variation of tWL can be interpreted by using an equilibrium model. Different variations of in-plane optical anisotropy before and after dot formation have been observed.