Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy

Autoria(s): Wu, J (Wu, J.); Jin, P (Jin, P.); Jiao, YH (Jiao, Y. H.); Lv, XJ (Lv, X. J.); Wang, ZG (Wang, Z. G.)
Data(s)

2007
Resumo

A detailed observation was made using atomic force microscopy on the two- to three-dimensional (2D-3D) growth mode transition in the molecular-beam epitaxy of InAs/GaAs(001). The evolution of the 3D InAs islands during the 2D-3D mode transition was divided into two successive phases. The first phase may be explained in terms of a critical phenomenon of the second-order phase transition.
Identificador

http://ir.semi.ac.cn/handle/172111/9556

http://www.irgrid.ac.cn/handle/1471x/64190
Idioma(s)

英语
Fonte

Wu, J (Wu, J.); Jin, P (Jin, P.); Jiao, YH (Jiao, Y. H.); Lv, XJ (Lv, X. J.); Wang, ZG (Wang, Z. G.) .Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy ,NANOTECHNOLOGY,APR 25 2007,18 (16):Art.No.165301
Palavras-Chave #半导体材料 #ASSEMBLED QUANTUM DOTS
Tipo

期刊论文
Acesso ao item digital