Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition


Autoria(s): Zhao DG; Jiang DS; Zhu JJ; Guo X; Liu ZS; Zhang SM; Wang YT; Yang H
Data(s)

2009

Resumo

The defect evolution and its correlation with electrical properties of GaN films grown by metalorganic chemical vapor deposition are investigated. It is found that the dislocation density decreases gradually during the growth process, and the dislocation reduction rate in the island coalescence process is especially rapid. The changes in electron mobility of GaN with the increase of growth time are mainly dependent on the dislocations acting as scattering centers. Furthermore, the variation of carrier concentration in GaN may be related with the point defects and their clusters. The quality of GaN could be improved by suitably increasing the film thickness. (C) 2009 Elsevier B.V. All rights reserved.

National Natural Science Foundation of China 60836003 60776047605060016047602160576003National Basic Research Program of China 2007CB936700 National High Technology Research and Development Program of China 2007AA03Z401

Identificador

http://ir.semi.ac.cn/handle/172111/7495

http://www.irgrid.ac.cn/handle/1471x/63484

Idioma(s)

英语

Fonte

Zhao, DG (Zhao, D. G.); Jiang, DS (Jiang, D. S.); Zhu, JJ (Zhu, J. J.); Guo, X (Guo, X.); Liu, ZS (Liu, Z. S.); Zhang, SM (Zhang, S. M.); Wang, YT (Wang, Y. T.); Yang, H (Yang, Hui) .Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition ,JOURNAL OF ALLOYS AND COMPOUNDS,NOV 13 2009,487(1-2 ):400-403

Palavras-Chave #半导体化学 #Nitride materials
Tipo

期刊论文