Evolution of InAs nanostructures grown by droplet epitaxy
| Data(s) |
2007
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|---|---|
| Resumo |
The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings. (C) 2007 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao, C (Zhao, C.); Chen, YH (Chen, Y. H.); Xu, B (Xu, B.); Jin, P (Jin, P.); Wang, ZG (Wang, Z. G.) .Evolution of InAs nanostructures grown by droplet epitaxy ,APPLIED PHYSICS LETTERS,JUL 16 2007,91 (3):Art.No.033112 |
| Palavras-Chave | #半导体材料 #QUANTUM DOTS |
| Tipo |
期刊论文 |
