Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
| Data(s) |
2006
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| Resumo |
Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) .Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2006 ,293(2):269-272 |
| Palavras-Chave | #光电子学 #growth mode #X-ray diffraction #metalorganic chemical vapor deposition #indium nitride #X-RAY-DIFFRACTION #THREADING DISLOCATIONS #ELECTRON-TRANSPORT #BUFFER LAYER #THIN-FILMS #GAN FILMS #SAPPHIRE #ALN |
| Tipo |
期刊论文 |
