Ferromagnetic MnSb Films Consisting of Nanorods and Nanoleaves

Ferromagnetic MnSb films were synthesized on Si wafers by physical vapor deposition. X-ray diffraction revealed that the films primarily consisted of MnSb alloy. Nanorods and nanoleaves were observed in the MnSb films by field-emission scanning electron microscopy. These nanorods had an average diameter of 20nm and a length of up to hundreds of nanometers. The nanoleaves had a width and thickness of about 100 and 20nm, respectively. Magnetic hysteresis loops were measured by an alternative gradient magnetometer, and the loops showed strong geometrical anisotropy.

A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications

This paper presents the development of LPCVD growth of 3C-SiC thin films grown on Si mesas and thermally oxidized SiO2 masks over Si with an area of 150 × 100μm^2 and SiO2/Si substrates. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2. 3C-SiC films on these substrates were characterized by optical microscopy, X-ray diffraction （ XRD ）, X-ray photoelectron spectroscopy （ XPS ）, scanning electron microscopy （SEM） and room temperature Hall effect measurements. It is shown that there were no voids at the interface between 3C-SiC and SiO2.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer

We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115 K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system

This work was supported by the National Science Foundation of China (60976008 and 60776015), the Special Funds for Major State Basic Research Project (973 program) of China (2006CB604907), and the 863 High Technology R&D Program of China (2007AA03Z402 and 2007AA03Z451). The authors express their appreciations to Prof. Yongliang Li (Analytical and Testing Center, Beijing Normal University) for FE-SEM measurements, to DrTieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate

The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.

Numerical Study on the Distribution Characteristics of TP in Taihu Lake, China

A depth-averaged two-dimensional hydrodynamics model and a two-dimensional water quality model, bases on the alternating direction implicit (ADI) method, is developed to study the distribution characteristics of total phosphorus (TP) in Taihu Lake. Wind stress, the pollution source from the inflow rivers, releasing rate of TP from the bottom sediment and water diversion from Yangtze River are the effecting factors of TP distribution. By using the model proposed in this paper, the concentration field of the total phosphorus was simulated, which leads to the conclusion that the flow field has a great influence on the spatial and temporal distribution of TP in the Taihu Lake.

贡嘎山植物小枝功能性状在不同生活型和不同海拔间的比较研究

植物功能生态学研究不仅提供了植物生理生态学与生态系统生态学的连接，还为植物种群生活史对策研究提供了材料。Westoby 等 (2002) 提出了利用植物功能性状变量的主导维度来确定和量化植物生活史的生态适应策略。在他们所提出四个主导维度中，叶大小－小枝大小是研究相对较少的一维；其内部各组分的关系、对环境的响应，以及与其它重要维度的关系，目前的理解非常有限。 本研究以贡嘎山不同海拔不同功能群物种为研究对象，采用种间比较和系统发生独立性比较等研究方法，系统研究了植物的功能特征及其相关性在不同生境及不同功能群间的差异，旨在分析不同功能群物种的叶大小－小枝大小的成本和收益。其研究结果将有助于我们理解植物生活史对策的进化，进而理解物种共存和维持物种多样性的机制。主要研究结果如下： 1. 叶大小－小枝大小关系 小枝茎横截面积与单叶面积和总叶面积均呈异速生长关系，即总叶面积和单叶面积的增加比茎横截面积的增加速度快。但是，总叶面积和叶片干重的增加却基本上与小枝茎干重的增加等速。系统发生独立性比较研究的结果与此相一致。表明，在某一给定的茎投入时，至少大叶大枝物种不比小叶小枝物种在支撑叶面积和叶片干重方面具有优势。同时，在某一给定的小枝茎投入时，常绿阔叶物种比落叶阔叶物种支撑更少的叶面积。在茎干重与总叶面积的关系中，落叶复叶物种比落叶单叶物种具有更高的y轴截距，表明复叶物种比单叶物种在展叶面积方面更有效。复叶物种与单叶物种相比，通常具有较大的叶大小和小枝大小。 2. 叶大小－叶数量关系 叶大小与数量间在不同的叶片习性、不同的叶片形态以及不同的生境类型的物种间均存在稳定的负的等速生长关系，且这种关系在系统发生独立性比较时依然成立。然而，在某一给定的出叶强度 (单位小枝的叶数量) 时，常绿阔叶物种比落叶物种具有更小的叶面积。而在给定体积基础上的出叶强度时，落叶复叶物种的叶面积显著大于落叶单叶物种，且复叶物种比单叶物种具有更大的叶大小和更小的出叶强度。但是，叶大小与数量间的关系在不同的海拔间并没有显著的差异。 3. 小枝大小－总叶面积关系 在不同的生活型或不同的生境下，小枝上总叶面积与茎干重和小枝干重均呈正的异速生长关系，且斜率显著小于1.0，表明小枝上总叶面积的增加都不能赶上小枝及茎大小的增加。这种“收益递减”表明随着小枝干重的增加，光截取的收益递减。此外，叶面积比 (总叶面积与小枝干重的比值) 与单叶干重呈显著负相关关系，系统发生独立性比较的结果与此相一致。根据以上结果，可以推测，大叶的物种在质量较好的生境中出现，而群落内部小枝茎的寿命较长的物种可以拥有较大的叶片。 4. 叶片色素浓度－LMA关系 随着海拔的升高，阔叶木本植物和草本植物的叶片色素浓度减少，叶绿素a/b和类胡萝卜素/叶绿素比值以及比叶重 (LMA) 增加。然而，在草本植物中的色素浓度、色素比值和LMA的变化比阔叶木本植物的更明显。同时，LMA与叶片色素浓度呈负相关关系，但是在落叶物种中的LMA对色素浓度的影响比常绿阔叶物种更强烈。总之，草本植物的叶片特征对海拔梯度的变化似乎比木本植物更敏感，LMA对叶片色素的保护作用在落叶物种中比在常绿阔叶物种显得更重要。这些结果表明不同生活型物种可能采取不同的保护机制来降低叶绿体器官的损伤和增加他们的碳获取能力。 Studies on plant functional ecology not only bridge plant eco-physiology and ecosystem functioning, but also enrich plant population biology. As pointed out by Westoby et al (2002), plant life history strategies can be identified and quantified by four leading dimensions of variations in plant functional traits, i.e., seed size/output, leaf mass per area and leaf life span, plant height, and leaf size-twig size. Compared to the other dimensions, the cost/benefit of the leaf size-twig size spectrum has scarcely been analyzed in relation to environmental gradients and life form types, and the adaptive significance of this spectrum is not fully understood. In the present study, the relationships between functional traits of plant twigs are determined for the species with different life forms along an altitudinal gradient of Gongga Mountain with both cross-species analysis and evolutionary divergence analysis. The primary objective of this study is to examine the cost/benefit of leaf size-twig size in plants. The study results are supposed to provide insights into the understanding of the mechanism of species coexistences. The results are shown in the following. 1. The relationship between leaf size and twig size Twig cross-sectional area allometrically scaled with both individual leaf area and total leaf area supported by the twigs. However, the increase in total lamina mass/area was generally proportional to the increase in stem mass. These correlations between trait variations were significant in both interspecies analysis and phylogenetically independent comparison (PIC) analysis, which indicated that thick-twigged/large-leaved species, at least, do not have an advantage in supporting leaf/lamina area and lamina mass for the same twig stem investment than thin-twigged/ small-leaved species. Meanwhile, the evergreen broad-leaved species supported a smaller leaf area for the same twig stem investment in terms of both cross-sectional area and stem mass than the deciduous species. The deciduous compound-leaved species have a higher y-intercept in the scaling relationship of twig stem mass versus total leaf area than the deciduous simple-leaved species, indicating that compound-leaved species were more efficient in displaying leaf area. The compound-leaved species were larger in both leaf size and twig size than their counterpart in the present study. 2. The relationship between leaf size and leaf number Significantly negative and isometric scaling relationships between leaf size and leafing intensity (leaf number per twig mass or volume) were found to be consistently conserved across species independent of leaf habit, leaf form and habitat type. The negative correlations between leaf size and leafing intensity were also observed across correlated evolutionary divergences. However, leaf area was smaller in the evergreen broad-leaved species at a given leafing intensity than in the deciduous species. The deciduous compound-leaved deciduous species were higher in leaf area than deciduous simple-laved species at a given volume-based leafing intensity. Moreover, the compound-leaved deciduous species were larger in leaf size but smaller in leafing intensity than their simple counterparts. No significant difference was found in the scaling relationships between altitudes. 3. The relationship between twig size and total leaf area Leaf area was found to scale positively and allometrically with both stem and twig mass (stem mass plus leaf mass) with slopes significantly smaller than 1.0, independent of life form and habitat type, indicating that the increase in total leaf area fails to keep pace with increasing twig size and stem size. This ‘diminishing returns’ suggests that the benefit of light intercept decreased with increasing twig mass. Moreover, the leaf area ratio (the ratio of total leaf area to stem or twig mass) correlated negatively with individual leaf mass. The results of PIC were consistent with the correlations. According to the results, it is speculated that large-leaved species may be favored when habitat is good and when stem longevity are long within community. 4. The relationship between leaf pigment concentrations and leaf mass per area With increasing altitude, the concentrations of pigments decreased, but the ratios of chlorophyll a/b and carotenoid/chlorophyll, and LMA increased, in both the broad-leaved woody species and herbaceous species groups. However, the changes in the pigment concentrations, ratios and LMA were more profound in the herbaceous species than in the woody species. In addition, pigment concentrations were negatively correlated with LMA in each life form type and in the pooled dataset. However, the LMA effect on leaf pigment concentrations was more profound in the deciduous species than in the evergreen braode-leaved species. In general, herbaceous species seemed more sensitive to the increasing altitude compared to woody species, and LMA seemed to be a more important mechanism for protecting leaf pigments in deciduous species than in evergreen broad-leaved species. These results suggested that the species with different life forms may employ different protective mechanisms to decrease the chloroplast apparatus damage and increase their carbon gain.