Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

Autoria(s): Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
Data(s)

2010
Resumo

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

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Our work was financially supported by National Natural Science Foundation of China (Grant Nos. 50802005 and 11074020), Program for New Century Excellent Talents in University (Grant No. NCET-08-0029), Ph.D. Program Foundation of Ministry of Education of China (Grant No. 200800061055), and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) Grant No. CityU 112608.

国内

Our work was financially supported by National Natural Science Foundation of China (Grant Nos. 50802005 and 11074020), Program for New Century Excellent Talents in University (Grant No. NCET-08-0029), Ph.D. Program Foundation of Ministry of Education of China (Grant No. 200800061055), and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) Grant No. CityU 112608.
Identificador

http://ir.semi.ac.cn/handle/172111/13920

http://www.irgrid.ac.cn/handle/1471x/105291
Idioma(s)

英语
Fonte

Zheng XH (Zheng X. H.), Huang AP (Huang A. P.), Xiao ZS (Xiao Z. S.), Yang ZC (Yang Z. C.), Wang M (Wang M.), Zhang XW (Zhang X. W.), Wang WW (Wang W. W.), Chu PK (Chu Paul K.).Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks. APPLIED PHYSICS LETTERS,2010,97(13):Art. No. 132908
Palavras-Chave #半导体材料 #OXYGEN #GATE #DIFFUSION #FILMS
Tipo

期刊论文
Acesso ao item digital