Heating, current drive and confinement regimes with the JET ICRH and lhcd systems

During its 1990 operation, 2 large RF systems were available on JET. The Ion Cyclotron Resonance Heating (ICRH) system was equipped with new beryllium screens and with feedback matching systems. Specific impurities generated by ICRH were reduced to negligible levels even in the most stringent H-mode conditions. A maximum power of 22 MW was coupled to L-mode plasmas. High quality H-modes (tau-E greater-than-or-equal-to 2.5 tau-EG) were achieved using dipole phasing. A new high confinement mode was discovered. It combines the properties of the H-mode regime to the low central diffusivities obtained by pellet injection. A value of n(d) tau-E T(i) = 7.8 x 10(20) m-3 s keV was obtained in this mode with T(e) approximately T(i) approximately 11 keV. In the L-mode regime, a regime, a record (140 kW) D-He-3 fusion power was generated with 10 - 14 MW of ICRH at the He-3 cyclotron frequency. Experiments were performed with the prototype launcher of the Lower Hybrid Current Drive (LHCD) systems with coupled power up to 1.6 MW with current drive efficiencies up to < n(e) > R I(CD)/P = 0.4 x 10(20) m-2 A/W. Fast electrons are driven by LHCD to tail temperatures of 100 keV with a hollow radial profile. Paradoxically, LHCD induces central heating particularly in combination with ICRH. Finally we present the first observations of the synergistic acceleration of fast electrons by Transit Time Magnetic Pumping (TTMP) (from ICRH) and Electron Landau Damping (ELD) (from LHCD). The synergism generates TTMP current drive even without phasing the ICRH antennae.

Measurement of Electron Density Profile Behind Strong Shock Waves with a Langmuir Probe

At the shock velocity range of 7~9km/s, the variations of electron density behind strong normal shock waves are measured in a low-density shock tube by using the Langmuir electrostatic probe technique. The electron temperature, calculated based on Park’s three-temperature model, is used in interpreting the probe current data. The peak electron densities determined in the present experiment are shown to be in a good agreement with those predicted by Lin’s calculation. The experimentally obtained ratios of the characteristic ionization distance to the mean free path of freestream ahead of the shock wave are found to be in a good agreement with the existing experiments and Park’s calculation.

Ecological limits of high-density milkfish farming

In the Philippines at present, milkfish farming in ponds includes a wide range of intensities, systems and practices. To make aquaculture possible, ecosystems are used as sources of energy and resources and as sinks for wastes. The growth of aquaculture is limited by the life-support functions of the ecosystem, and sustainability depends on matching the farming techniques with the processes and functions of the ecosystems, for example, by recycling some degraded resources. The fish farm has many interactions with the external environment. Serious environmental problems may be avoided if high-intensity farms are properly planned in the first place, at the farm level and at the level of the coastal zone where it can be integrated with other uses by other sectors. It is believed that the key to immediate success in the mass production of milkfish for local consumption and for export of value-added forms may be in semi-intensive farming at target yields of 3 tons per ha per year, double the current national average. Intensive milkfish farming will be limited by environmental, resource and market constraints. Integrated intensive farming systems are the appropriate long-term response to the triple needs of the next century: more food, more income, and more jobs for more people, all from less land, less resources, and less non-renewable energy.

Enzyme-free glucose biosensor based on low density CNT forest grown directly on a Si/SiO2 substrate

A highly sensitive nonenzymatic amperometric glucose sensor was fabricated by using Ni nanoparticles homogeneously dispersed within and on the top of a vertically aligned CNT forest (CNT/Ni nanocomposite sensor), which was directly grown on a Si/SiO2 substrate. The surface morphology and elemental analysis were characterized using scanning electron microscopy and energy dispersive spectroscopy, respectively. Cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activities of CNT/Ni electrode. The CNT/Ni nanocomposite sensor exhibited a great enhancement of anodic peak current after adding 5 mM glucose in alkaline solution. The sensor can also be applied to the quantification of glucose content with a linear range covering from 5 μM to 7 mM, a high sensitivity of 1433 μA mM-1 cm-2, and a low detection limit of 2 μM. The CNT/Ni nanocomposite sensor exhibits good reproducibility and long-term stability, moreover, it was also relatively insensitive to commonly interfering species, such as uric acid, ascorbic acid, acetaminophen, sucrose and d-fructose. © 2013 Elsevier B.V.

Comparative analysis of static and switching performance of 1.2 kV commercial SiC transistors for high power density applications

This paper presents a critical comparison of static and switching performance of commercially available 1.2 kV SiC BJTs, MOSFETs and JFETs with 1.2 kV Si IGBTs. The experiments conducted are mainly focussed on investigating the temperature dependence of device performance. As an emerging commercial device, special emphasis is placed on SiC BJTs. The experimental data indicate that the SiC BJTs have relatively smaller conduction, off-state and turn-off switching losses, in comparison to the other devices. Furthermore, SiC BJTs have demonstrated much higher static current gain values in comparison to their silicon counterparts, thereby minimising driver losses. Based on the results, the suitability of SiC devices for high power density applications has been discussed. © 2013 IEEE.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region

High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248262]

Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

Studies of high DC current induced degradation in III-V nitride based heterojunctions

We report experiments on high de current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at E-1 = E-C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

Analysis of current induced by long internal solitary waves in stratified ocean

An approximate theoretical expression for the current induced by long internal solitary waves is presented when the ocean is continuously or two-layer stratified. Particular attention is paid to characterizing velocity fields in terms of magnitude, flow components, and their temporal evolution/spatial distribution. For the two-layer case, the effects of the upper/lower layer depths and the relative layer density difference upon the induced current are further studied. The results show that the horizontal components are basically uniform in each layer with a shear at the interface. In contrast, the vertical counterparts vary monotonically in the direction of the water depth in each layer while they change sign across the interface or when the wave peak passes through. In addition, though the vertical components are generally one order of magnitude smaller than the horizontal ones, they can never be neglected in predicting the heave response of floating platforms in gravitationally neutral balance. Comparisons are made between the partial theoretical results and the observational field data. Future research directions regarding the internal wave induced flow field are also indicated.

A fixed arc length direct current plasma torch for reduced pressure deposition of thin films

Because of its high energy density direct current(dc)thermal plasmas are widely accepted as a processing medium which facilitates high processing rates high fluxes of radical species the potential for smaller jnstallations a wide choice of reactants and high quench rates[1].A broad range of industrial processing methods have been developed based on dc plasma technology. However,nonstationary features limited new applications of dc plasma in advanced processing, where reliability£¬reproducibility and precise controllability are required£. These challenges call for better understanding of the arc and jet behavior over a wide range of generating parameters and a comprehensive control of every aspect of lhe plasma processing.

Study of a high power density sodium polysulfide/bromine energy storage cell

Nickel catalyst supported on carbon was made by reduction of nickelous nitrate with hydrogen at high temperature. Ni/ C catalyst characterization was carried out by XRD. It was found that the crystal phase of NiS and NiS2 appeared in the impregnated catalyst. Ni/ C and Pt/ C catalysts gave high performance as the positive and negative electrodes of a sodium polysulfide/ bromine energy storage cell, respectively. The overpotentials of the positive and negative electrodes were investigated. The effect of the electrocatalyst loading and operating temperature on the charge and discharge performance of the cell was investigated. A power density of up to 0.64 W cm(-2) ( V = 1.07 V) was obtained in this energy storage cell. A cell potential efficiency of up to 88.2% was obtained when both charge and discharge current densities were 0.1 A cm(-2).