High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

RCE photodiodes at wavelength band of 1.06 μm

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.

Shear transformation zone volume determining ductile–brittle transition of bulk metallic glasses

Three-point bending experiments were performed on as-cast and annealed samples of Zr52.5Cu17.9Ni14.6Al10Ti5 (Vit105) bulk metallic glasses over a wide range of temperatures varying from room temperature (293 K) to liquid nitrogen temperature (77 K). The results demonstrated that the free volume decrease due to annealing and/or cryogenic temperature can reduce the propensity for the formation of multiple shear bands and hence deteriorate plastic deformation ability. We clearly observed a sharp ductile-to-brittle transition (DBT), across which microscopic fracture feature transfers from micro-scale vein patterns to nano-scale periodic corrugations. Macroscopically, the corresponding fracture mode changes from ductile shear fracture to brittle tensile fracture. The shear transformation zone volume, taking into account free volume, temperature and strain rate, is proposed to quantitatively characterize the DBT behavior in fracture of metallic glasses.

Numerical simulation of a bubble rising in shear-thinning fluids

The motion of a single bubble rising freely in quiescent non-Newtonian viscous fluids was investigated experimentally and computationally. The non-Newtonian effects in the flow of viscous inelastic fluids are modeled by the Carreau theological model. An improved level set approach for computing the incompressible two-phase flow with deformable free interface is used. The control volume formulation with the SIMPLEC algorithm incorporated is used to solve the governing equations on a staggered Eulerian grid. The simulation results demonstrate that the algorithm is robust for shear-thinning liquids with large density (rho(1)/rho(g) up to 10(3)) and high viscosity (eta(1)/eta(g) up to 10(4)). The comparison of the experimental measurements of terminal bubble shape and velocity with the computational results is satisfactory. It is shown that the local change in viscosity around a bubble greatly depends on the bubble shape and the zero-shear viscosity of non-Newtonian shear-thinning liquids. The shear-rate distribution and velocity fields are used to elucidate the formation of a region of large viscosity at the rear of a bubble as a result of the rather stagnant flow behind the bubble. The numerical results provide the basis for further investigations, such as the numerical simulation of viscoelastic fluids. (C) 2010 Elsevier B.V. All rights reserved.

Wide-band underwater acoustic absorption based on locally resonant unit and interpenetrating network structure

The interpenetrating network structure provides an interesting avenue to novel materials. Locally resonant phononic crystal (LRPC) exhibits excellent sound attenuation performance based on the periodical arrangement of sound wave scatters. Combining the LRPC concept and interpenetrating network glassy structure, this paper has developed a new material which can achieve a wide band underwater strong acoustic absorption. Underwater absorption coefficients of different samples were measured by the pulse tube. Measurement results show that the new material possesses excellent underwater acoustic effects in a wide frequency range. Moreover, in order to investigate impacts of locally resonant units, some defects are introduced into the sample. The experimental result and the theoretical calculation both show that locally resonant units being connected to a network structure play an important role in achieving a wide band strong acoustic absorption.

Multi-mode Vortex-induced Vibration of Slender Cable Experiencing Shear Flow

The dynamic characteristics of slender cable often present serried modes with low frequencies due to large structure flexibility resulted from high aspect ratio (ratio of length to diameter of cable), while the flow velocity distributes non-uniformly along the cable span actually in practical engineering. Therefore, the prediction of the vertex-induce vibration of slender cable suffered from multi-mode and high-mode motions becomes a challenging problem. In this paper a prediction approach based on modal energy is developed to deal with multi-mode lock-in. Then it is applied to the modified wake-oscillator model to predict the VIV displacement and stress responses of cable in non-uniform flow field. At last, illustrative examples are given of which the VIV response of flexible cable in nonlinear shear flow field is analyzed. The effects of flow velocity on VIV are explored. Our results show that both displacement and stress responses become larger as the flow velocity increasing; especially higher stress response companied with higher frequency vibration should be paid enough attention in practical design of SFT because of its remarkable influence on structure fatigue life.

Study of the νi13/2－1 band in 189Pt

High-spin levels of 189Pt have been studied with the in-beam γ-spectroscopy method via the 176Yb(18O,5n) reaction at the beam energies of 88 and 95 MeV. The previously known νi-131/2 band has been confirmed, and its unfavored signature branch extended up to the 13/2+ state. Within the framework of the triaxial particle-rotor model, the νi-113/2 band is suggested to be associated with the 11/2[615] configuration, and to have triaxial deformation.