Pt/Si界面反应与肖特基势垒形成的研究

详细研究了Pt/Si和Pt硅化物/Si界面的反应性质、原子结构及杂质/缺陷分布，讨论了它们对肖特基势垒的形成、势垒特性和势垒高度的影响。

硅化物形成条件对Pt硅化物/硅势垒的影响

对PtSi/N-Si和PtSi/P-Si两种肖特基势垒的形成条件与势垒高度之间的关系进行了详细研究。从理论上分析了在退火过程中引入的影响肖特基势垒特性的各种因素，同时指出了获得理想肖特基势垒的退火条件。

Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火

于2010-11-23批量导入

退火气氛中痕量氧在反应形成pt硅化物中的作用

于2010-11-23批量导入

Nd3+-doped LaF3 nanoparticles with a larger emission cross-section

A series of Nd3+-doped LaF3 nanoparticles with Nd3+ concentrations from 0.5 to 10 mol% were synthesized. The fluorescence intensity and lifetime of the nanoparticles at various Nd3+ doping concentration were investigated. The nanoparticles displayed strongest fluorescence intensity at 3 mol% Nd3+ concentration. Eighty-eight percentage quantum efficiency was obtained when the Nd3+ concentration was 0.5 mol%. Optical properties of nanoparticles were studied according to Judd-Ofelt theory. A larger emission cross-section, sigma(em), for F-4(3/2) -> I-4(11/2) transition of the Nd3+ ion was obtained as 3.21 x 10(-20) cm(2), which was two times of the currently reported value. The larger emission cross-section and strong fluorescence intensity demonstrate that these nanoparticles are promising materials for laser applications. (C) 2010 Published by Elsevier B. V.