Widely tunable picosecond fiber ring laser mode-locked by a single-wall carbon nanotube (SWNT)-polycarbonate composite film saturable absorber

A widely tunable fiber ring laser, utilising a SWNT/polycarbonate film mode-locker and a 3-nm tunable filter, has been realized. 2.3ps pulse generation over 27nm spectral range is achieved for a constant pump power of 25mW. © 2007 Optical Society of America.

Widely tunable picosecond fiber ring laser mode-locked by a single-wall carbon nanotube (SWNT)-polycarbonate composite film saturable absorber

A widely tunable fiber ring laser, utilising a SWNT/polycarbonate film mode-locker and a 3-nm tunable filter, has been realized. 2.3ps pulse generation over 27nm spectral range is achieved for a constant pump power of 25mW. © 2008 Optical Society of America.

Scaling of velocity fluctuations in off-wall boundary conditions for turbulent flows

A model for off-wall boundary conditions for turbulent flow is investigated. The objective of such a model is to circumvent the need to resolve the buffer layer near the wall, by providing conditions in the logarithmic layer for the overlying flow. The model is based on the self-similarity of the flow at different heights in the logarithmic layer. It was first proposed by Mizuno and Jiménez (2013), imposing at the boundary plane a velocity field obtained on-the-fly from an overlying region. The key feature of the model was that the lengthscales of the field were rescaled to account for the self-similarity law. The model was successful at sustaining a turbulent logarithmic layer, but resulted in some disagreements in the flow statistics, compared to fully-resolved flows. These disagreements needed to be addressed for the model to be of practical application. In the present paper, a more refined, wavelength-dependent rescaling law is proposed, based on the wavelength-dependent dynamics in fully-resolved flows. Results for channel flow show that the new model eliminates the large artificial pressure fluctuations found in the previous one, and a better agreement is obtained in the bulk properties, the flow fluctuations, and their spectral distribution across the whole domain. © Published under licence by IOP Publishing Ltd.

Numerical analyses of tunnel-induced settlement damage to a masonry wall

Settlements due to underground construction represent a risk for the architectural heritage, especially in The Netherlands, because of the combination of soft soil, fragile pile foundation and brittle, un-reinforced masonry façade. Modelling of soil-structure interaction is fundamental to assess the risk of building damage due to tunnelling. This paper presents results of finite element analyses carried out with different models for a simple masonry wall. Focus is paid on the comparison between coupled, uncoupled and semi-coupled analyses, in which the soil-structure interaction is represented in different ways. In particular, the implementation of a soil-structure interface model in the numerical analyses is analysed, in order to asses its validity. The aim of the research project is the development of a damage classification system for different building typologies.

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm.

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current-voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.

Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(111) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT AlN buffer layer is about 110 nm. Together with the low-temperature (LT) AlN interlayer, high-quality GaN epilayer with low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

Aharonov-Bohm oscillation and chirality effect in optical activity of single-wall carbon nanotubes

We study the Aharonov-Bohm effect in the optical phenomena of single-wall carbon nanotubes (SWCN) and also their chirality dependence. Especially, we consider the natural optical activity as a proper observable and derive its general expression based on a comprehensive symmetry analysis, which reveals the interplay between the enclosed magnetic flux and the tubule chirality for arbitrary chiral SWCN. A quantitative result for this optical property is given by a gauge invariant tight-binding approximation calculation to stimulate experimental measurements.

The influence of AlN buffer layer thickness on the properties of GaN epilayer

The influence of low-temperature AlN buffer layer thickness on GaN epilayer was investigated by triple-axis X-ray diffraction (XRD) and photoluminescence measurements. A method was proposed to measure the screw and edge dislocation densities by XRD. It was found that the buffer layer thickness was a key parameter to affect the quality of GaN epilayer and an appropriate thickness resulted in the best structural and optical properties except the lateral grain size. After the thickness exceeding the appropriate value, the compressive stress in the epilayer decreased as the thickness increased, which led to the redshift of the near-band edge luminescence. The experimental results showed the buffer layer thickness had more influence on edge dislocation than screw type and the former was perhaps the main source of the yellow band. (C) 2004 Elsevier B.V. All rights reserved.