An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

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National Natural Science Foundation of China 60836003 60776047 60506001 60476021 60576003; National Science Fund for Distinguished Young Scholars 60925017; National Basic Research Program of China 2007CB936700; National High Technology Research and Development Program of China 2007AA03Z401

国内

National Natural Science Foundation of China 60836003 60776047 60506001 60476021 60576003; National Science Fund for Distinguished Young Scholars 60925017; National Basic Research Program of China 2007CB936700; National High Technology Research and Development Program of China 2007AA03Z401