Coupled Ge/Si and Ge isotope ratios as geochemical tracers of seafloor hydrothermal systems: Case studies at Loihi Seamount and East Pacific Rise 9°50’N

Germanium (Ge) and Silicon (Si) exhibit similar geochemical behaviour in marine environments but are variably enriched in seafloor hydrothermal fluids relative to seawater. In this study, Ge isotope and Ge/Si ratio systematics were investigated in low temperature hydrothermal vents from Loihi Seamount (Pacific Ocean, 18°54’N, 155°15’W) and results were compared to high-temperature vents from the East Pacific Rise (EPR) at 9°50’N. Loihi offers the opportunity to understand contrasting Ge and Si behaviour in low temperature seafloor hydrothermal systems characterized by abundant Fe oxyhydroxide deposition at the seafloor. The results show that both Ge/Si and δ74/70Ge in hydrothermal fluids are fractionated relative to the basaltic host rocks. The enrichment in Ge vs. Si relative to fresh basalts, together with Ge isotope fractionation (Δ74/70Ge fluid-basalt up to 1.15 ‰ at EPR 9°50’N and 1.64 ‰ at Loihi) are best explained by the precipitation of minerals (e.g. quartz and Fe-sulfides) during higher temperature seawater-rock reactions in the subsurface. The study of Fe-rich hydrothermal deposits at Loihi, largely composed of Fe-oxyhydroxides, shows that Ge isotopes are also fractionated upon mineral precipitation at the seafloor. We obtained an average Ge isotope fractionation factor between Fe-oxyhydroxide (ferrihydrite) and dissolved Ge in the fluid of -2.0 ± 0.6 ‰ (2sd), and a maximum value of -3.6 ± 0.6 ‰ (2sd), which is consistent with recent theoretical and experimental studies. The study of a hydrothermal chimney at Bio 9 vent at EPR 9°50’N also demonstrates that Ge isotopes are fractionated by approximately -5.6 ± 0.6 ‰ (2sd) during precipitation of metal sulfides under hydrothermal conditions. Using combined Ge/Si and estimated Ge isotope signatures of Ge sinks and sources in seawater, we propose a preliminary oceanic budget of Ge which reveals that an important sink, referred as the “missing Ge sink”, may correspond to Ge sequestration into authigenic Fe-oxyhydroxides in marine sediments. This study shows that combining Ge/Si and δ74/70Ge systematics provides a useful tool to trace hydrothermal Ge and Si sources in marine environments and to understand formation processes of seafloor hydrothermal deposits.

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications.

Driving Ge island ordering on nanostructured Si surfaces

Semiconductor epitaxial nanostructures have been recently proposed as the key building blocks of many innovative applications in materials science and technology. To bring their tremendous potential to fruition, a fine control of nanostructure size and placement is necessary. We present a detailed investigation of the self-ordering process in the prototype case of Ge/Si heteroepitaxy. Starting from a bottom-up strategy (step-bunching instabilities), our analysis moves to lithographic techniques (scanning tunneling lithography, nanomechanical stamping, focused ion beam patterning) with the aim of developing a hybrid approach in which the exogenous intervention is specifically designed to suit and harness the natural self-organization dynamics of the system.

Microstructural and mechanical behavior study of suction cast Nb-Si binary alloys

The solidification pathways of Nb rich Nb-Si alloys when processed under non-equilibrium conditions require understanding. Continuing with our earlier work on alloying additions in single eutectic composition 1,2], we report a detailed characterization of the microstructures of Nb-Si binary alloys with wide composition range (10-25 at% Si). The alloys are processed using chilled copper mould suction casting. This has allowed us to correlate the evolution of microstructure and phases with different possible solidification pathways. Finally these are correlated with mechanical properties through studies on deformation using mechanical testing under indentation and compressive loads. It is shown that microstructure modification can significantly influence the plasticity of these alloys.

First-principles study of transition metal impurities in Si

By using ab initio electronic structure calculations within density functional theory, we study the structural, electronic, and magnetic properties of Si doped with a transition metal impurity. We consider the transition metals of the 3d series V, Cr, Mn, Fe, Co, and Ni. To get insight into the level filling mechanism and the magnetization saturation, we first investigate the transition metal-Si alloys in the zinc-blende structure. Next, we investigate the doping of bulk Si with a transition metal atom, in which it occupies the substitutional site, the interstitial site with tetrahedral symmetry, and the interstitial site with hexagonal symmetry. It is found that all of these transition metal impurities prefer an interstitial position in Si. Furthermore, we show that it is possible to interpret the electronic and magnetic properties by using a simple level filling picture and a comparison is made to Ge doped with the same transition metal atoms. In order to get insight into the effect of a strained environment, we calculate the formation energy as a function of an applied homogeneous pressure and we show that an applied pressure can stabilize the substitutional position of transition metal impurities in Si. Finally, the energies of the ferromagnetic states are compared to those of the antiferromagnetic states. It is shown that the interstitial site of the Mn dopant helps us to stabilize the nearest neighbor substitutional site to realize the ferromagnetic state. For doping of Si with Cr, a ferrimagnetic behavior is predicted.

Electroluminescence from Ge on Si substrate at room temperature

A Ge/Si heterojunction light emitting diode with a p(+)-Ge/i-Ge/N+-Si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on N+-Si substrate. The device had a good I-V rectifying behavior. Under forward bias voltage ranging from 1.1 to 2.5 V, electroluminescence around 1565 nm was observed at room temperature. The mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. The results indicate that germanium is a potential candidate for silicon-based light source material. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3216577]

Research progress of self-organized Ge quantum dots on Si substrate

A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

A Ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees C. On the low temperature Ge buffer layer with pits, high quality Ge layer was grown at 600 degrees C with a threading dislocation density of similar to 1x10(5)cm(-2). According to channeling and random Rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the Ge/Si interface and immediately under the surface peak. The root-mean-square surface roughness of Ge film was 0.33nm.

离子束溅射制备Si／Ge多层膜及红外吸收性能研究

采用离子束溅射方法在Si衬底上制备Si／Ge多层膜。通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品。通过X射线衍射、拉曼散射、原子力显微分析（AFM）等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。通过红外吸收谱的测量发现薄膜样品具有较好的红外吸收性能。

小尺寸Si/Ge量子点内应变和组分的拉曼光谱表征

本文详细地研究了原始生长和退火处理后的Si/Ge量子点的拉曼光谱.我们观测到了Si/Ge量子点的一系列本征的拉曼振动模以及Ge-Ge模的LO和TO声子峰间4.2cm-1的频率劈裂.通过这些参数, 我们自洽地确定了原始生长的平面直径为20nm和高为2nm的Si/Ge量子点内Ge的平均组分为80%,平均应变为-3.4%.分析清楚地表明了这种小尺寸的Si/Ge量子点内的应变仍遵从双轴应变,并且应变的释放主要由量子点和Si隔离层间Si-Ge原子互扩散决定.

在Si衬底上自组装生长Ge量子点研究进展

在Si衬底上自组装生长纳米尺度的Ge量子点，由于三维量子限制效应的贡献，能够在能带结构上对 Si、Ge天然材料的间接带特性实施准直接带结构的改性，使激子行为和带间复合跃迁得到大幅度增强，同时Ge量子点的可控有序相关排列还有助于发展新一代的Si基电子波量子器件．文章回顾了自20世纪80年代末至今Ge/ Si量子点生长研究的重要进展，对其潜在的重要应用作出了评述．结合作者自己的研究结果，着重介绍了Ge量子点的生长动力学及其形态的演变过程，指出自组装生长的Ge/Si量子点属Ⅱ型能带结构，其发光效率比一维量子阱有很大增强．探讨了用模板衬底实现对Ce量子点尺寸和分布的有序可控生长方法与途径．

Strength-ductility behaviour of Al-Si-Cu-Mg casting alloys in T6 temper

A comparative study of the mechanical properties of 20 experimental alloys has been carried out. The effect of different contents of Si, Cu, Mg, Fe and Mn, as well as solidification rate, has been assessed using a strength-ductility chart and a quality index-strength chart developed for the alloys. The charts show that the strength generally increases and the ductility decreases with an increasing content of Cu and Mg. Increased Fe (at Fe/Mn ratio 0.5) dramatically lowers the ductility and strength of low Si alloys. Increased Si content generally increases the strength and the ductility. The increase in ductility with increased Si is particularly significant when the Fe content is high. The charts are used to show that the cracking of second phase particles imposes a limit to the maximum achievable strength by limiting the ductility of strong alloys. The (Cu + Mg) content (at.%), which determines the precipitation strengthening and the volume fraction of Cu-rich and Mg-rich intermetallics, can be used to select the alloys for given strength and ductility, provided the Fe content stays below the Si-dependent critical level for the formation of pre-eutectic alpha-phase particles or beta-phase plates.

Combining Sr and Na additions in hypoeutectic Al-Si foundry alloys

From recent published data, it is still unclear whether combining additions of Na and Sr have synergistic effects or deleterious interactions, This paper clarifies the interactions between these two modifiers and investigates the effects of such interactions on alloy solidification and castability. It was found that combined additions of Sr and Na do not appear to cause improvement of the modification of the eutectic microstructure even after only a short period after addition. Na addition may promote Sr vaporization and/or oxidation kinetically. leading to a quicker loss of both modifiers, which is blamed for the rapid loss of the modification effect during melt holding. Quenching trials during the eutectic arrest indicate that addition of Sr into Na-modified melts does not alter the eutectic solidification behaviour The effect of Na on eutectic solidification dominates, and the eutectic is observed to evolve with a significant dependency on the thermal gradient, Combining Sr and Na additions produced no beneficial effects on porosity and casting defects. (c) 2005 Elsevier B.V. All rights reserved.

Iron-related porosity in Al-Si-(Cu) foundry alloys

An experimental program has been undertaken to explore the effect of iron concentration on porosity levels in Al-Si alloy sand castings. The effect of iron concentrations above, below and equal to the critical iron content for alloys with either 5 or 9% Si and either 0, 1 or 3% Cu has been determined. Increasing iron concentrations were found to increase porosity in all alloys except the copper-containing Al-5% Si alloys which displayed a porosity minimum at the critical iron content. Porosity was observed to be higher in the Al-9% Si castings than the Al-5% Si castings. Differences in the primary phase volume fraction and morphology may explain this observation. The results of this experimental work do not support the existing published theories that have been proposed to explain the effect the iron on porosity. An alternative theory is therefore developed. (c) 2006 Elsevier B.V. All rights reserved.