Research progress of self-organized Ge quantum dots on Si substrate


Autoria(s): Huang CJ; Yu JZ; Wang QM
Data(s)

2004

Resumo

A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs). Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate, the structure analysis of multilayer Ge QDs, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered Ge quantum dots.

Identificador

http://ir.semi.ac.cn/handle/172111/8072

http://www.irgrid.ac.cn/handle/1471x/63630

Idioma(s)

英语

Fonte

Huang, CJ; Yu, JZ; Wang, QM .Research progress of self-organized Ge quantum dots on Si substrate ,PROGRESS IN NATURAL SCIENCE,MAY 2004,14 (5):388-395

Palavras-Chave #光电子学 #quantum dots
Tipo

期刊论文