An effective etching technique for polycarbonate/core-shell poly(butyl acrylate) poly(methyl methacrylate) blend

Two etching techniques are used to reveal the morphology of PC/PBA-cs-PMMA blend. One is based on acetic acid (CH3COOH) solutions, whereas the other uses CCl4/ C2H5OH (3/1 v/v). The latter approach shows to be more appropriate and successful for revealing the morphology of PC/PBA-cs-PMMA blend.

FABRICATION OF STM TIPS WITH CONTROLLED GEOMETRY BY ELECTROCHEMICAL ETCHING AND ECSTM TIPS COATED WITH PARAFFIN

We have presented two simple methods of ''unfixed-position shield'' and ''pulling out'' for making sharp STM Pt-Ir tips with low aspect ratio by electrochemical etching in KCN/NaOH aqueous solution and ECSTM tips coated with paraffin. By limiting the elec

Chemical etching of optical fibre tips - experiment and model

The formation of chemically etched fibre tips for use in optical scanning probe microscopy is addressed. For tips formed at a cleaved fibre end in the bulk of a buffered HF acid solution the morphological features (tip height, cone angle) are found to depend strongly on the temperature and etchant composition. The tip formation process is analysed and explained in terms of a simple model in which the only pertinent physical parameters are the fibre core diameter and etch rates of the fibre core and cladding. The etch rates are determined in separate experiments as a function of temperature (in the range 24-50 degreesC) for etchant solutions of de ionised water: 50% HF acid: 40% NH4F in the volume ratio 1 : 1 : X for X=2, 4 and 6, and used in the model to yield a correct description of the experimental tip cone angles. The model is successfully extended to the intriguing case of negative tip formation which initiates in a normal, positive tip structure. By contrast, tip formation in the meniscus region of a bare fibre/etchant/organic solvent system is found to be independent of etchant composition and temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

Epitaxial BiFeO3 nanostructures fabricated by differential etching of BiFeO3 films

We report on differential etching behavior of the different orientations of the polarization in BiFeO3 (BFO), similar to other ferroelectrics, such as LiNbO3. We show how this effect can be used to fabricate epitaxial BiFeO3 nanostructures. By means of piezoresponse force microscopy (PFM) domains of arbitrary shape and size can be poled in an epitaxial BiFeO3 film, which are then reproduced in the film morphology by differential etching. Structures with a lateral size smaller than 200 nm were fabricated and very good retention properties as well as a highly increased piezoelectric response were detected by PFM. (C) 2011 American Institute of Physics. [doi:10.1063/1.3630027]

Evanescent wave sensor to monitor the etching rate of an optical fibre

The design and development of an evanescent wave sensor to determine the etching rate of the core of an optical fibre is discussed in this paper. The working of the device is based on the principle of propagation and loss of the evanescent wave in the cladding region of the fibre. The fraction of light intensity creeping out of the core of an uncladded fibre is a function of the core radius. As this radius decreases, the evanescent wave coupling to the medium surrounding the core enhances. This results in a decrease of the transmitted light intensity through the fibre. This technique is useful to design and fabricate optical fibres with different core geometries.

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.