263 resultados para Buffers
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ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics.
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Diversos estudos em epidemiologia têm investigado a influência do ambiente urbano na saúde da população. Os benefícios dos espaços verdes têm sido um dos aspectos estudados recentemente. Uma das principais vias apontadas é através da promoção da prática de atividades físicas. Outros benefícios incluem a melhoria das condições psicossociais e da qualidade do ar. Esses fatores, por sua vez, têm comprovada associação com a saúde cardiovascular. Nesse sentido, o objetivo deste trabalho é investigar a associação entre espaços verdes e mortalidade por doenças isquêmicas do coração (DIC) e doenças cerebrovasculares (DCBV) no município do Rio de Janeiro, entre os anos de 2010 e 2012. Foi realizado um estudo do tipo ecológico, tendo os setores censitários como unidade de análise. Como variável desfecho foi calculada a razão de mortalidade padronizada (RMP) por sexo e idade, pelo método indireto. Como medidas de exposição às áreas verdes foram utilizadas a média e a variabilidade do Índice de Vegetação por Diferença Normalizada ou NDVI (sigla em inglês) médio referente ao período de estudo, em buffers de 100 metros das bordas dos setores censitários. Os dados foram analisados por um modelo linear condicional autorregressivo, que considera também a estrutura de dependência espacial. Foram incluídas no modelo as covariáveis Índice de Desenvolvimento Social (IDS); densidade de vias de tráfego veicular, divididas entre vias coletoras e locais e vias estruturais primárias e secundárias, utilizadas como proxy de poluição em buffers de 100 metros dos setores; e o indicador de setores censitários litorâneos. Após o ajuste do modelo controlando os possíveis fatores de confusão, foi verificada a redução de 4,5% (CI95%: 7,3%, 1,6%) da mortalidade nas áreas com exposição referente ao intervalo interquartílico mais alto da média do NDVI; e de 3,4% (IC95%: 6,2%; 0,7%) nas áreas referentes ao intervalo interquartílico mais alto da variabilidade, ambos em comparação com o intervalo mais baixo. Esse resultado indica a associação inversa entre a exposição aos espaços verdes e a mortalidade por DIC e DCBV no município do Rio de Janeiro. Além disso, o aumento da mortalidade está associado a piores condições de vida e à poluição do ar.
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Production responsiveness refers to the ability of a production system to achieve its operational goals in the presence of supplier, internal and customer disturbances, where disturbances are those sources of change which occur independently of the system's intentions. A set of audit tools for assessing the responsiveness of production operations is being prepared as part of an EPSRC funded investigation. These tools are based on the idea that the ability to respond is linked to: the nature of the disturbances or changes requiring a response; their impact on production goals; and the inherent response capabilities of the operation. These response capabilities include information gathering and processing (to detect disturbances and production conditions), decision processes (which initiate system responses to disturbances) and various types of process flexibilities and buffers (which provide the physical means of dealing with disturbances). The paper discusses concepts and issues associated with production responsiveness, describes the audit tools that have been developed and illustrates their use in the context of a steel manufacturing plant.
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Estuaries provide critical nursery habitat for many commercially and recreationally important fish and shellfish species. These productive, diverse ecosystems are particularly vulnerable to pollution because they serve as repositories for non–point-source contaminants from upland sources, such as pesticide runoff. Atrazine, among the most widely used pesticides in the United States, has also been one of the most extensively studied. There has not, however, been a specific assessment of atrazine in marine and estuarine ecosystems. This document characterizes the presence and transformation of atrazine in coastal waters, and the effects of atrazine on marine organisms. Review of marine and estuarine monitoring data indicate that atrazine is chronically present in U.S. coastal waters at relatively low concentrations. The concentrations detected have typically been below acute biological effects levels, and below the U.S. EPA proposed water quality criteria for atrazine. While direct risk of atrazine impacts are low, uncertainty remains regarding the effects of long-term low levels of atrazine in mixture with other contaminants. It is recommended that best management practices, such as the use of vegetative buffers and public education about pesticide use, be encouraged in the coastal zone to minimize runoff of atrazine into marine and estuarine waters.
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High salinity estuaries in the southeastern U.S. have experienced increased inputs of contaminants from nonpoint source (NPS) urban runoff and decreases in habitat due to filling of wetlands and dock/bulkhead construction. Urbanization may pose significant risks to estuarine fauna, particularly crustaceans. The grass shrimp of the genus Palaemonetes, is one of the dominant species found in estuarine tidal creeks, accounting for greater than 50% of all macropelagic fauna on an annual basis. Spatial analytical and geographic information system techniques were used to determine which factors influenced the Palaemonetes population structures in a South Carolina bar-built estuary surrounded by urban development. Impacts from land use practices were investigated using concentric circular buffers around study sites. Factors investigated included sediment-associated polycyclic aromatic hydrocarbons concentration, land use classification, percent impervious surfaces, and other selected urban factors. Geographic information system and statistical modeling showed quantitative relationships between land use class and impacts on Palaemonetes density. The study suggests that habitat loss is a major factor influencing grass shrimp densities. Multiple regression modeling suggests a significant relationship between habitat alterations and Palaemonetes densities.
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In this report we analyze the Topic 5 report’s recommendations for reducing nitrogen losses to the Gulf of Mexico (Mitsch et al. 1999). We indicate the relative costs and cost-effectiveness of different control measures, and potential benefits within the Mississippi River Basin. For major nonpoint sources, such as agriculture, we examine both national and basin costs and benefits. Based on the Topic 2 economic analysis (Diaz and Solow 1999), the direct measurable dollar benefits to Gulf fisheries of reducing nitrogen loads from the Mississippi River Basin are very limited at best. Although restoring the ecological communities in the Gulf may be significant over the long term, we do not currently have information available to estimate the benefits of such measures to restore the Gulf’s long-term health. For these reasons, we assume that measures to reduce nitrogen losses to the Gulf will ultimately prove beneficial, and we concentrate on analyzing the cost-effectiveness of alternative reduction strategies. We recognize that important public decisions are seldom made on the basis of strict benefit–cost analysis, especially when complete benefits cannot be estimated. We look at different approaches and different levels of these approaches to identify those that are cost-effective and those that have limited undesirable secondary effects, such as reduced exports, which may result in lost market share. We concentrate on the measures highlighted in the Topic 5 report, and also are guided by the source identification information in the Topic 3 report (Goolsby et al. 1999). Nonpoint sources that are responsible for the bulk of the nitrogen receive most of our attention. We consider restrictions on nitrogen fertilizer levels, and restoration of wetlands and riparian buffers for denitrification. We also examine giving more emphasis to nitrogen control in regions contributing a greater share of the nitrogen load.
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Do hospitals experience safety tipping points as utilization increases, and if so, what are the implications for hospital operations management? We argue that safety tipping points occur when managerial escalation policies are exhausted and workload variability buffers are depleted. Front-line clinical staff is forced to ration resources and, at the same time, becomes more error prone as a result of elevated stress hormone levels. We confirm the existence of safety tipping points for in-hospital mortality using the discharge records of 82,280 patients across six high-mortality-risk conditions from 256 clinical departments of 83 German hospitals. Focusing on survival during the first seven days following admission, we estimate a mortality tipping point at an occupancy level of 92.5%. Among the 17% of patients in our sample who experienced occupancy above the tipping point during the first seven days of their hospital stay, high occupancy accounted for one in seven deaths. The existence of a safety tipping point has important implications for hospital management. First, flexible capacity expansion is more cost-effective for safety improvement than rigid capacity, because it will only be used when occupancy reaches the tipping point. In the context of our sample, flexible staffing saves more than 40% of the cost of a fully staffed capacity expansion, while achieving the same reduction in mortality. Second, reducing the variability of demand by pooling capacity in hospital clusters can greatly increase safety in a hospital system, because it reduces the likelihood that a patient will experience occupancy levels beyond the tipping point. Pooling the capacity of nearby hospitals in our sample reduces the number of deaths due to high occupancy by 34%.
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Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]
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Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation.
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A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs Sb cover layer on the upper InAs quantum dots (QDs) layers, the emission wavelength of the QDs is extended successfully to 1.533 mu m at room temperature, and the density of the QDs is in the range of 4 x 10(9) -8 x 10(9) cm(-2). Strong photoluminescence (PL) intensity with a full width at half maximum of 28.6 meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoelectronic and quantum functional devices.
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We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150 K, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current density is 667 A/cm(2) under pulsed operation. The pulsed lasers can operate up to 286 K.
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The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.
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InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs were formed with a smaller size and larger density than that on normal GaAs buffer layers. It is discussed that local tensile surface strain regions that are preferred sites for InAs islands nucleation are increased in the case of the LT-GaAs buffer layers due to exhibiting As precipitates. The PL spectra show a blue-shifted peak energy with narrower linewidth revealing the improvement of optical properties of the QDs grown on LT-GaAs epi-layers. It suggests us a new way to improve the uniformity and change the energy band structure of the InAs self-organized QDs by carefully controlling the surface stress states of the LT-GaAs buffers on which the QDs are formed. (C) 2000 Elsevier Science B.V. All rights reserved.
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We have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).
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In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.