A wide-band front-end for terrestrial and cable receptions

In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.

In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.

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Made available in DSpace on 2010-03-29T06:06:06Z (GMT). No. of bitstreams: 1 2248.pdf: 4050610 bytes, checksum: b1f102f0d9467c9080058937644abe8f (MD5) Previous issue date: 2007

IEEE Microwave Theory & Tech Soc.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

IEEE Microwave Theory & Tech Soc.