Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature
Data(s) |
2006
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Resumo |
ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
洪瑞金;邵建达;贺洪波;范正修.,J. Appl. Phys.,2006,99(9):93520- |
Palavras-Chave | #光学薄膜 #SUPERLATTICES #EMISSION #EXCITONS #ZNO/(MG |
Tipo |
期刊论文 |