GaNxAs1-x(x＜0.01)中合金态的光学特性

应用多种光谱手段研究了分子束外延生长在半绝缘的(001,GaAs衬底上的低氮含量的GaNAs中三元合金态的光学特性.变温PL谱揭示了合金态的本征特性以及其与氮的杂质态的根本区别,而脉冲激发的光荧光谱则进一步显示了合金态的本征光学特性.最后还研究了GaNAs的吸收光谱特征.

980 nm半导体激光器可靠性的研究现状分析

本文介绍了提高980 nm半导体激光器可靠性的几种方案，并做了综合评述。进一步介绍了离子辅助镀膜技术在提高980 nm激光器可靠性方面的应用。

ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术

介绍了电子回旋共振等离子体化学气相沉积(简称ECR plasma CVD)法淀积980nm大功率半导体激光器两端面光学膜的工艺条件，探索了膜系监控的方法和优越性，讨论了这种淀积方法的优点和淀积的光学膜的优良特性。

High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers

于2010-11-23批量导入

High power 980 nm InGaAs/AlGaAs strained quantum well lasers

于2010-11-23批量导入

980 nm InGaAs应变量子阱激光器和掺铒光纤放大器用泵浦源

利用分子束外延技术研制出了高质量InGaAs/GaAs应变量子阱材料及量子阱激光器。在室温和10 K温度下,应变量子阱材料的光荧光峰值半宽分别为32 meV和.4 meV,宽接触激光器的阈值电流密度低达140 A/cm~2。脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15 mA和0.8 W/A,线性输出功率大于120 mW,基横模输出功率可达100 mW。InGaAs应变量子阱激光器和单模光纤进行了耦合其组合件出纤光功率典型值为40 mW,最大值可达60 mW,显示出了高的基横模输出功率和高的耦合效率。其组合件在40 mW下,中心发射波长在977 nm,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器泵浦源。

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Luminosity determination for the dd→αK+K-experiment atANKE/COSY

High resolution studies of a0/f0(980) decays into channels involving open strangeness are currently being performed at COSY-Jülich. As a “filter” for isospin-zero intermediate states, i.e. to selectively produce the f0(980) resonance, the dd→αK+K− reaction was measured with the magnetic ANKE spectrometer. In order to determine the luminosity of this experiment, the elastically and quasi-elastically scattered deuterons were recorded simultaneously with the αK+K− events. Here we report about the luminosity determination via investigating the (quasi-) elastic deuterons at ANKE.

Measurement of the isospin-filtering dd → 4He K+K- reaction at Q = 39 MeV

The total cross-section for the dd → 4HeK+K− reaction has been measured at a beam momentum of 3.7GeV/c, corresponding to an excess energy of 39MeV, which is the maximum possible atthe Cooler Synchrotron COSY-Jülich. A deuterium cluster-jet target and the ANKE forward magnetic spectrometer, placed inside the storage ring, have been employed in this investigation. We find a total cross-section of σtot < 14 pb, which brings into question the viability of investigating the dd → 4He a0(980)reaction as a means of studying isospin violation.

基于ARM920T的HIRFL-CSR前端总线控制器FBC-01

本文论述用于兰州重离子加速器冷却存储环(HIRFL-CSR)控制系统的前端总线系统控制器FBC-01的硬件设计。该控制器是基于0.8mmBGA封装的AT91RM9200(ARM9)处理器,运行嵌入式LINUX操作系统。控制器可以连接标准的VGA显示器、键盘、鼠标,具有通用的10M/100M以太网接口、USB接口、RS-232接口、485接口、CANBUS接口。可以带SD卡、CF卡存储器。该控制器采用现场可编程的FPGA器件设计背板接口,并采用具有64mA高驱动能力的总线驱动器,不仅符合VME规范的电气要求,而且具有灵活的接口信号定义可编程能力,是HIRFL-CSR控制系统的关键部件。

Controllable Red, Green, Blue (RGB) and Bright White Upconversion Luminescence of Lu2O3:Yb3+/Er3+/Tm3+ Nanocrystals through Single Laser Excitation at 980 nm

Lu2O3:Yb3+/Er3+/Tm3+ nanocrystals have been successfully synthesized by a solvothermal process followed by a subsequent heat treatment at 800 degrees C. Powder X-ray diffraction, transmission electron microscopy, upconversion photoluminescence spectra, and kinetic decay were used to characterize the samples. Under single-wavelength diode laser excitation of 980 nm, the bright blue emissions of Lu2O3:Yb3+, Tm3+ nanocrystals near 477 and 490 nm were observed due to the (1)G(4)-> H-3(6) transition of Tm3+. The bright green UC emissions of Lu2O3:Er3+ nanocrystals appeared near 540 and 565 nm were observed and assigned to the H-2(11/2)-> I-4(15/2) and S-4(3/2)-> I-4(15/2) transitions, respectively, of Er3+. The ratio of the intensity of green luminescence to that of red luminescence decreases with an increase of concentration of Yb3+ in Lu2O3:Er3+ nanocrystals.

Ti_(0.17)Zr_(0.08)V_(0.34)Nb_(0.01)Cr_(0.1)Ni_(0.3)氢化物电极合金微观结构及电化学性能研究

采用XRD、FESEM-EDS、ICP及EIS等方法研究了Ti0.17Zr0.08V0.34Nb0.01Cr0.1Ni0.3氢化物电极合金微观结构和电化学性能。X射线衍射分析表明:该合金由体心立方结构(bcc)的V基固溶体主相和少量六方结构的C14型Laves相组成;FESEM及EDS分析表明:V基固溶体主相形成树枝晶,C14型Laves相呈网格状围绕着树枝晶的晶界,元素在两相中的分布呈现镜像关系。电化学性能测试结果表明:该合金的氢化物电极在303￣343K较宽的温度区间内,表现出较高的电化学容量,在303K和343K时,电化学容量分别为337.0mAh·g-1和327.9mAh·g-1。在303K循环100周后,容量为282.7mAh·g-1。ICP分析结果表明,氢化物电极在充放电循环过程中,V及Zr元素向KOH电解质中的溶出较为严重。EIS研究表明,金属氢化物电极表面电化学反应的电荷转移电阻(RT)随循环次数的增加而增加,相应的交换电流密度则随循环次数的增加而降低。氢化物电极循环过程中RT的增大以及V和Zr元素的溶解,可能是导致电极容量衰减的主要原因。

GH-01超低温胶粘剂的性能

介绍了GH -0 1双组分、室温固化环氧树脂超低温胶粘剂的某些性能 ,说明这种胶粘剂能粘接多种材料 ,尤其是在液氮温度下仍有良好的粘接性能 ,并且真空放气量小 ,是在超低温环境下使用的良好胶粘剂

EA-01电应力疏散胶的研制

本文报导了用于热缩电缆附件中间连接的一种新型填充段电应力疏散胶的配方，研究了电性能调节剂，增粘剂，填料，氨酸橡胶等对产品性能的影响．