Phase transformation of ZrO2:Tb3+ nanophosphor: Color tunable photoluminescence and photocatalytic activities

The current study involves synthesis of a series of Tb3+ doped ZrO2 nanophosphors by solution combustion method using oxalyl dihydrazide as fuel. The as-formed ZrO2:Tb3+ nanophosphors having different concentrations of Tb3+ (1-11 mol%) were characterized by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-Visible spectroscopic techniques and the materials were subjected to photoluminescence and photocatalytic dye decolorization studies. The PXRD analysis indicates the formation of tetragonal symmetry up to 5 mol% concentration of Tb3+. Further increase in Tb3+ concentration has lead to cubic phase formation and the same was confirmed by Rietveld refinement analysis. SEM images revealed that material was highly porous in nature comprising of large voids and cracks with irregular morphology. TEM and SAED images clearly confirm the formation of high quality tetragonal nanocrystals. The emissive properties of nanophosphors were found to be dependent on Tb3+ dopant concentration. The green emission of the material was turned to white emission with the increase of Tb3+ ion concentration. The photocatalytic activities of these nanophosphors were probed for the decolorization of Congo red under UV and Sunlight irradiation. All the photocatalysts showed enhanced activity under UV light compared to Sunlight. The photocatalyst with 7 mol% Tb3+ showed enhanced activity attributed to effective separation of charge carriers due to phase transformation from tetragonal to cubic. The influence of crystallite size and PL on charge carrier trapping-recombination dynamics was investigated. The study successfully demonstrates synthesis of tetragonal and cubic ZrO2:Tb3+ green nanophosphors with superior photoluminescence and photocatalytic activities. (C) 2014 Elsevier B.V. All rights reserved.

Scheelite-type MWO4 (M = Ca, Sr, and Ba) nanophosphors: Facile synthesis, structural characterization, photoluminescence, and photocatalytic properties

Scheelite-type MWO4 (M = Ca, Sr, and Ba) nanophosphors were synthesized by the precipitation method. All compounds crystallized in the tetragonal structure with space group 141/a (No. 88). Scherrer's and TEM results revealed that the average crystallite size varies from 32 to 55 nm. FE-SEM illustrate the spherical (CaWO4), bouquet (SrWO4), and fish (BaWO4) like morphologies. PL spectra indicate the broad emission peak maximum at 436 (CaWO4), 440 (SrWO4), and 433 nm (BaWO4) under UV excitation. The calculated CIE color coordinates of MWO4 nanophosphors are close to the commercial BAM and National Television System Committee blue phosphor. The photocatalytic activities of MWO4 were investigated for the degradation of methylene blue dye under UV illumination. At pH 3, BaWO4 nanocatalyst showed 100% dye degradation within 60 min. The photocatalytic activity was in the decreasing order of BaWO4> CaWO4>SrWO4 under both neutral and acidic conditions. (C) 2014 Elsevier Ltd. All rights reserved.

Bio-inspired route for the synthesis of spherical shaped MgO:Fe3+ nanoparticles: Structural, photoluminescence and photocatalytic investigation

MgO:Fe3+ (0.1-5 mol%) nanoparticles (NPs) were synthesized via eco-friendly, inexpensive and simple low temperature solution combustion route using Aloe vera gel as fuel. The final products were characterized by SEM, TEM and HRTEM. PXRD data and Rietveld analysis revealed the formation of cubic system. The influence of Fe3+ ion concentration on the structure morphology, UV absorption, PL emission and photocatalytic activity of MgO:Fe3+ NPs were investigated. The yellow emission with CIE chromaticity coordinates (0.44, 0.52) and average correlated color temperature value was found to be 3540 K which corresponds to warm light of NPs. The control of Fe3+. on MgO matrix influences the photocatalytic decolorization of methylene blue (MB) under UV light. The enhanced photocatalytic activity of MgO:Fe3+ (4 mol%) was attributed to dopant concentration, effective crystallite size, textural properties, decreased band gap and capability for reducing the electron hole pair recombination. Further, the trends of inhibitory effect in the presence of different radical scavengers were explored. These findings open up new avenues for the exploration of Fe-doped MgO in eco-friendly water applications and in the process of display devices. (C) 2015 Elsevier B.V. All rights reserved.

Synthesis of Eu3+-activated ZnO superstructures: Photoluminescence, Judd-Ofelt analysis and Sunlight photocatalytic properties

Photoluminescence and photocatalytic properties of Eu-doped ZnO nanoparticles (NPs) were synthesized by facile phyto route. XPS results demonstrated the existence of Eu3+ as dopant into ZnO. Morphologies of the NPs were mainly dependent on Eu3+ and Aloe vera gel. Red shift of energy band gap was due to the creation of intermediate energy states of Eu3+ and oxygen vacancies in the band gap. PL emission of ZnO:Eu3+ (1-11 mol%, 8 ml and 7 mol%, 2-12 ml) exhibit characteristic peaks of D-5(0) -> F-7(2) transitions. From the Judd-Ofelt analysis, intensities of transitions between different.' levels dependent on the symmetry of the local environment of Eu3+ ions. CIE chromaticity co-ordinates confirm reddish emission of the phosphor. Further, NPs exhibit excellent photocatalytic activity for the degradation of Rhodamine B (94%) under Sunlight was attributed to crystallite size, band gap, morphology and oxygen vacancies. In addition, photocatalyst reusability studies were conducted and found that Eu-doped catalyst could be reused several times with negligible decrease in catalytic activity. The present work directs new possibilities to provide some new insights into the design of new phyto synthesized nanophosphors for display devices, photocatalysts with high activity for environmental clean-up and solar energy conversion. (C) 2015 Elsevier B.V. All rights reserved.

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures. © 2007 American Institute of Physics.

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 degrees C were studied using room-temperature photo luminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. (C) 2007 Elsevier B.V. All rights reserved.

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.

Structure and photoluminescence studies of Pr-implanted GaN

The structure and photoluminscence (PL) properties of Pr-implanted GaN thin films have been studied. RBS/channeling technique was used to explore the damage recovery at high annealing temperature and study the dependence of the radiation damage with ion implantation direction. A complete recovery of the ion implantation damage cannot be achieved at annealing temperatures up to 1050degreesC. It is found that the channeling implantation results in the decrease of the damage. The PL experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050degreesC. Moreover, the PL intensity is also seriously affected by ion implantation geometries. The PL intensity for the sample implanted along channeled direction is nearly 2 times more intense than that observed from the sample implanted along random direction. The thermal quenching of PL intensity from 10 to 300K for sample annealed at 1050degreesC is only 30%. (C) 2004 Elsevier B.V. All rights reserved.

Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.

Photoluminescence of Er-doped hydrogenated amorphous silicon nitride

Er photoluminescence (Er PL) and dangling bonds (DBs) of annealed Er-doped hydrogenated amorphous silicon nitride (a-SiN:H(Er)) with various concentrations of nitrogen are studied in the temperature range 62-300 K. Post-annealing process is employed to change the DBs density of a-SiN:H(Er). PL spectra, DBs density and H, N concentrations are measured. The intensity of Er PL displays complicated relation with Si DBs density within the annealing temperature range 200-500 degreesC. The intensity of Er PL first increases with decreasing density of Si dangling bonds owing to the structural relaxation up to 250 degreesC, and continues to increase up to 350 degreesC even though the density of Si DBs increases due to the improvement of symmetry environment of Er3+. (C) 2003 Elsevier B.V. All rights reserved.

Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photo luminescence (PL) that a strong blue shift of the PL peak energy of 47 meV with increasing PL excitation power from 0.63 to 20 mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μ m) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μ m range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.

Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.