Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)


Autoria(s): Lei W; Chen YH; Wang YL; Ye XL; Jin P; Xu B; Zeng YP; Wang ZG
Data(s)

2005

Resumo

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Identificador

http://ir.semi.ac.cn/handle/172111/8772

http://www.irgrid.ac.cn/handle/1471x/63916

Idioma(s)

英语

Fonte

Lei, W; Chen, YH; Wang, YL; Ye, XL; Jin, P; Xu, B; Zeng, YP; Wang, ZG .Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001) ,PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING,2005,PTS 1-5(475-479):1897-1900

Palavras-Chave #半导体材料 #polarized photoluminescence
Tipo

期刊论文